NTD4963N-1G ON Semiconductor, NTD4963N-1G Datasheet - Page 6

• Manufacturer Part Number: NTD4963N-1G
• Description: MOSFET N-CH 30V 8.1A IPAK
• Manufacturer: ON Semiconductor

Specifications of NTD4963N-1G

• Package / Case: IPak, TO-251, DPak (3 straight short leads + tab)
• Mounting Type: Through Hole
• Power - Max: 1.1W
• Fet Type: MOSFET N-Channel, Metal Oxide
• Gate Charge (qg) @ Vgs: 16.2nC @ 10V
• Vgs(th) (max) @ Id: 2.5V @ 250µA
• Current - Continuous Drain (id) @ 25° C: 8.1A
• Drain To Source Voltage (vdss): 30V
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 9.6 mOhm @ 30A, 10V
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 13.6 mOhms
• Forward Transconductance Gfs (max / Min): 40 S
• Drain-source Breakdown Voltage: 30 V
• Continuous Drain Current: 44 A
• Power Dissipation: 35.7 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Gate Charge Qg: 8.1 nC
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

V
S
F
1
B
R
4
2
3
L
A
D
H
2 PL
0.13 (0.005)
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
J
M
C
0.228
5.80
T
−T−
PACKAGE DIMENSIONS
E
DPAK (SINGLE GAUGE)
SEATING
PLANE
SOLDERING FOOTPRINT*
U
0.244
6.20
http://onsemi.com
CASE 369AA−01
ISSUE A
0.101
6
2.58
0.118
3.0
0.063
1.6
SCALE 3:1
Z
6.172
0.243
inches
mm
NOTES:
1. DIMENSIONING AND TOLERANCING
2. CONTROLLING DIMENSION: INCH.
PER ANSI Y14.5M, 1982.
STYLE 2:
DIM
A
B
C
D
E
H
R
S
U
V
F
J
L
Z
PIN 1. GATE
2. DRAIN
3. SOURCE
4. DRAIN
0.235
0.250
0.086
0.025
0.018
0.030
0.386
0.018
0.180
0.024
0.020
0.035
0.155
MIN
0.090 BSC
INCHES
0.245
0.265
0.094
0.035
0.024
0.045
0.410
0.023
0.215
0.040
0.050
MAX
−−−
−−−
MILLIMETERS
5.97
6.35
2.19
0.63
0.46
0.77
9.80
0.46
4.57
0.60
0.51
0.89
3.93
MIN
2.29 BSC
10.40
MAX
6.22
6.73
2.38
0.89
0.61
1.14
0.58
5.45
1.01
1.27
−−−
−−−