NTD4963N-1G ON Semiconductor, NTD4963N-1G Datasheet - Page 5

• Manufacturer Part Number: NTD4963N-1G
• Description: MOSFET N-CH 30V 8.1A IPAK
• Manufacturer: ON Semiconductor

Specifications of NTD4963N-1G

• Package / Case: IPak, TO-251, DPak (3 straight short leads + tab)
• Mounting Type: Through Hole
• Power - Max: 1.1W
• Fet Type: MOSFET N-Channel, Metal Oxide
• Gate Charge (qg) @ Vgs: 16.2nC @ 10V
• Vgs(th) (max) @ Id: 2.5V @ 250µA
• Current - Continuous Drain (id) @ 25° C: 8.1A
• Drain To Source Voltage (vdss): 30V
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 9.6 mOhm @ 30A, 10V
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 13.6 mOhms
• Forward Transconductance Gfs (max / Min): 40 S
• Drain-source Breakdown Voltage: 30 V
• Continuous Drain Current: 44 A
• Power Dissipation: 35.7 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Gate Charge Qg: 8.1 nC
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

1000
1000
0.01
100
100
1200
1000
0.1
10
10
800
600
400
200
1
1
0
1
0.1
0
V
Single Pulse
T
V
I
V
C
Figure 11. Maximum Rated Forward Biased
D
GS
DD
GS
= 25°C
= 15 A
= 30 V
= 15 V
= 11.5 V
t
V
Figure 9. Resistive Switching Time
d(on)
DS
V
5
t
Variation vs. Gate Resistance
Figure 7. Capacitance Variation
DS
f
, DRAIN−TO−SOURCE VOLTAGE (V)
C
C
C
, DRAIN−TO−SOURCE VOLTAGE (V)
R
iss
rss
oss
G
Safe Operating Area
, GATE RESISTANCE (W)
1
10
RDS(on) LIMIT
THERMAL LIMIT
PACKAGE LIMIT
10
15
V
GS
= 0 V
10
TYPICAL PERFORMANCE CURVES
20
T
J
25
100 ms
10 ms
= 25°C
1 ms
10 ms
dc
http://onsemi.com
t
t
d(off)
r
100
100
30
5
10
30
25
20
15
10
35
30
25
20
15
10
9
8
7
6
5
4
3
2
1
0
5
0
5
0
0
Figure 8. Gate−to−Source and Drain−to−Source
0.4
25
Figure 10. Diode Forward Voltage vs. Current
Figure 12. Maximum Avalanche Energy vs.
Q
V
T
T
2
gs
GS
J
J
, STARTING JUNCTION TEMPERATURE (°C)
= 25°C
0.5
V
= 0 V
SD
Starting Junction Temperature
50
Q
4
, SOURCE−TO−DRAIN VOLTAGE (V)
G
Voltage vs. Total Charge
, TOTAL GATE CHARGE (nC)
Q
gd
0.6
6
75
Q
8
T
0.7
10
100
12
0.8
I
T
V
V
14
D
J
DD
GS
I
125
D
= 30 A
= 25°C
0.9
= 26 A
= 15 V
= 30 A
16
150
1.0
18