SPD09P06PL G Infineon Technologies, SPD09P06PL G Datasheet - Page 9

• Manufacturer Part Number: SPD09P06PL G
• Description: MOSFET P-CH 60V 9.7A TO252-3
• Manufacturer: Infineon Technologies
• Series: SIPMOS®r

Specifications of SPD09P06PL G

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 250 mOhm @ 6.8A, 10V
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 9.7A
• Vgs(th) (max) @ Id: 2V @ 250µA
• Gate Charge (qg) @ Vgs: 21nC @ 10V
• Input Capacitance (ciss) @ Vds: 450pF @ 25V
• Power - Max: 42W
• Mounting Type: Surface Mount
• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Configuration: Single
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 0.25 Ohms
• Drain-source Breakdown Voltage: - 60 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 9.7 A
• Power Dissipation: 42 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Fall Time: 89 ns
• Minimum Operating Temperature: - 55 C
• Rise Time: 168 ns
• Package: DPAK (TO-252)
• Vds (max): -60.0 V
• Rds (on) (max) (@10v): 250.0 mOhm
• Rds (on) (max) (@4.5v): -
• Rds (on) (max) (@2.5v): -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: SP000443928

Rev 2.5
Warnings
Due to technical requirements, components may contain dangerous substances. For information
on the types in question, please contact the nearest Infineon Technologies Office. Infineon
Technologies components may be used in life-support devices or systems only with the express
written approval of Infineon Technologies, if a failure of such components can reasonably be
expected to cause the failure of that life-support device or system or to affect the safety or
effectiveness of that device or system. Life support devices or systems are intended to be
implanted in the human body or to support and/or maintain and sustain and/or protect human life.
If they fail, it is reasonable to assume that the health of the user or other persons may be
endangered.
Published by
Infineon Technologies AG
81726 Munich, Germany
© 2008 Infineon Technologies AG
All Rights Reserved.
Legal Disclaimer
The information given in this document shall in no event be regarded as a guarantee of conditions
or characteristics. With respect to any examples or hints given herein, any typical values stated
herein and/or any information regarding the application of the device, Infineon Technologies
hereby disclaims any and all warranties and liabilities of any kind, including without limitation,
warranties of non-infringement of intellectual property rights of any third party.
Information
For further information on technology, delivery terms and conditions and prices, please contact
the nearest Infineon Technologies Office
Page 8
(www.infineon.com
).
SPD09P06PL G
2008-07-29