SPD09P06PL G Infineon Technologies, SPD09P06PL G Datasheet - Page 3

• Manufacturer Part Number: SPD09P06PL G
• Description: MOSFET P-CH 60V 9.7A TO252-3
• Manufacturer: Infineon Technologies
• Series: SIPMOS®r

Specifications of SPD09P06PL G

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 250 mOhm @ 6.8A, 10V
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 9.7A
• Vgs(th) (max) @ Id: 2V @ 250µA
• Gate Charge (qg) @ Vgs: 21nC @ 10V
• Input Capacitance (ciss) @ Vds: 450pF @ 25V
• Power - Max: 42W
• Mounting Type: Surface Mount
• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Configuration: Single
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 0.25 Ohms
• Drain-source Breakdown Voltage: - 60 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 9.7 A
• Power Dissipation: 42 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Fall Time: 89 ns
• Minimum Operating Temperature: - 55 C
• Rise Time: 168 ns
• Package: DPAK (TO-252)
• Vds (max): -60.0 V
• Rds (on) (max) (@10v): 250.0 mOhm
• Rds (on) (max) (@4.5v): -
• Rds (on) (max) (@2.5v): -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: SP000443928

Electrical Characteristics, at T
Parameter
Dynamic Characteristics
Transconductance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Gate Charge Characteristics
Gate to source charge
Gate to drain charge
Gate charge total
Gate plateau voltage
Reverse Diode
Inverse diode continuous
forward current
Inverse diode direct current,
pulsed
Inverse diode forward voltage
Reverse recovery time
Reverse recovery charge
Rev 2.5
Symbol
g
C
C
C
t
t
t
t
Q
Q
Q
V
I
I
V
t
Q
j
d(on)
r
d(off)
f
S
SM
rr
fs
= 25 °C, unless otherwise specified
iss
oss
rss
(plateau) V
SD
gs
gd
g
rr
V
I
V
f=1MHz
V
I
V
I
V
V
V
T
V
V
di
D
D
D
Page 3
DS
GS
DD
DD
DD
DD
GS
DD
C
GS
R
F
=-5.4
=-5.4, R
=-5.4A, R
=25°C
=-30V, I
/dt=100A/µs
=0V, V
=-30V, V
=-30V, V
=-48V, I
=-48V, I
=0 to -10V
=-48V, I
=0V, I
2*I
Conditions
D
*R
G
F
F =
DS
G
=-9.7A
=6
DS(on)max
D
D
D
GS
GS
=6
l
=-9.7A
=-9.7A,
=-9.7A
S
=-25V,


,


=-4.5V,
=-4.5V,
,
min.
1.8
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Values
SPD09P06PL G
typ.
360
103
168
-4.1
-1.1
3.5
1.3
5.1
40
11
49
89
14
52
64
-
-
2008-07-29
max.
-38.8
450
130
252
134
-9.7
-1.4
7.5
50
17
74
21
76
96
2
-
-
Unit
S
pF
ns
nC
V
A
V
ns
nC