BSR316P L6327 Infineon Technologies, BSR316P L6327 Datasheet
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BSR316P L6327
Manufacturer Part Number
BSR316P L6327
Description
MOSFET P-CH 100V 360MA SC-59
Manufacturer
Infineon Technologies
Series
SIPMOS®r
Datasheet
1.BSR316P_L6327.pdf
(9 pages)
Specifications of BSR316P L6327
Package / Case
SC-59
Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
1.8 Ohm @ 360mA, 10V
Drain To Source Voltage (vdss)
100V
Current - Continuous Drain (id) @ 25° C
360mA
Vgs(th) (max) @ Id
1V @ 170µA
Gate Charge (qg) @ Vgs
7nC @ 10V
Input Capacitance (ciss) @ Vds
165pF @ 25V
Power - Max
500mW
Mounting Type
Surface Mount
Minimum Operating Temperature
- 55 C
Configuration
Single
Transistor Polarity
P-Channel
Resistance Drain-source Rds (on)
1.8 Ohm @ 10 V
Drain-source Breakdown Voltage
100 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
0.36 A
Power Dissipation
500 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
SP000265407