BSS127 H6327 Infineon Technologies, BSS127 H6327 Datasheet - Page 7

• Manufacturer Part Number: BSS127 H6327
• Description: MOSFET N-CH 600V 0.021 A SOT23
• Manufacturer: Infineon Technologies
• Series: SIPMOS®r

Specifications of BSS127 H6327

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 500 Ohm @ 16mA, 10V
• Drain To Source Voltage (vdss): 600V
• Current - Continuous Drain (id) @ 25° C: 21mA
• Vgs(th) (max) @ Id: 2.6V @ 8µA
• Gate Charge (qg) @ Vgs: 1nC @ 10V
• Input Capacitance (ciss) @ Vds: 28pF @ 25V
• Power - Max: 500mW
• Mounting Type: Surface Mount
• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Rev. 1.47
13 Typ. gate charge
V
parameter: V
15 Gate charge waveforms
GS
=f(Q
Q
V
10
V
9
8
7
6
5
4
3
2
1
0
g(th)
g s(th)
GS
0
gate
); I
0.1
DD
Q
D
=0.01 A pulsed
g s
0.2
0.3
Q
Q
120 V
gate
g
Q
0.4
sw
[nC]
Q
300 V
g d
0.5
0.6
480 V
0.7
Q
g ate
0.8
page 7
14 Drain-source breakdown voltage
V
BR(DSS)
700
680
660
640
620
600
580
560
540
520
500
-60
=f(T
j
); I
-20
D
=250 µA
20
T
j
60
[°C]
100
140
BSS127
2010-07-29
180