BSS127 H6327 Infineon Technologies, BSS127 H6327 Datasheet - Page 5

• Manufacturer Part Number: BSS127 H6327
• Description: MOSFET N-CH 600V 0.021 A SOT23
• Manufacturer: Infineon Technologies
• Series: SIPMOS®r

Specifications of BSS127 H6327

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 500 Ohm @ 16mA, 10V
• Drain To Source Voltage (vdss): 600V
• Current - Continuous Drain (id) @ 25° C: 21mA
• Vgs(th) (max) @ Id: 2.6V @ 8µA
• Gate Charge (qg) @ Vgs: 1nC @ 10V
• Input Capacitance (ciss) @ Vds: 28pF @ 25V
• Power - Max: 500mW
• Mounting Type: Surface Mount
• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Rev. 1.47
5 Typ. output characteristics
I
parameter: V
7 Typ. transfer characteristics
I
D
D
=f(V
=f(V
0.025
0.015
0.005
0.025
0.015
0.005
0.03
0.02
0.01
0.02
0.01
DS
0
GS
0
0
0
); T
); |V
j
=25 °C
GS
DS
|>2|I
2
1
D
|R
DS(on)max
4
V
V
2
GS
DS
[V]
[V]
6
3
8
3.6 V
3 V
2.6 V
3.8 V
3.2 V
4 V
10 V
4
5 V
page 5
10
6 Typ. drain-source on resistance
R
parameter: V
8 Typ. forward transconductance
g
fs
DS(on)
=f(I
0.025
0.015
0.005
1000
0.02
0.01
800
600
400
200
D
0
=f(I
0.000
0
); T
0
2.6 V
D
j
); T
=25 °C
GS
3 V
j
0.005
=25 °C
0.005
3.2 V
0.01
I
I
0.010
3.6 V
D
D
[A]
[A]
0.015
4 V
0.015
3.8 V
0.02
BSS127
5 V
10 V
0.025
0.020
2010-07-29