BSS123 L6327 Infineon Technologies, BSS123 L6327 Datasheet - Page 2

MOSFET N-CH 100V 170MA SOT-23

BSS123 L6327

Manufacturer Part Number
BSS123 L6327
Description
MOSFET N-CH 100V 170MA SOT-23
Manufacturer
Infineon Technologies
Series
SIPMOS®r
Datasheet

Specifications of BSS123 L6327

Package / Case
SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
6 Ohm @ 170mA, 10V
Drain To Source Voltage (vdss)
100V
Current - Continuous Drain (id) @ 25° C
170mA
Vgs(th) (max) @ Id
1.8V @ 50µA
Gate Charge (qg) @ Vgs
2.67nC @ 10V
Input Capacitance (ciss) @ Vds
69pF @ 25V
Power - Max
360mW
Mounting Type
Surface Mount
Minimum Operating Temperature
- 55 C
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
6 Ohm @ 10 V
Drain-source Breakdown Voltage
100 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
0.17 A
Power Dissipation
360 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
BSS123 L6327
BSS123L6327INTR
BSS123L6327XT
SP000084574
Electrical Characteristics, at T
Parameter
Static Characteristics
Drain-source breakdown voltage
V
Gate threshold voltage, V
I
Zero gate voltage drain current
V
V
Gate-source leakage current
V
Drain-source on-state resistance
V
Drain-source on-state resistance
V
Thermal Characteristics
Parameter
Characteristics
Thermal resistance, junction - ambient
D
GS
DS
DS
GS
GS
GS
=50µA
=100V, V
=100V, V
=0, I
=20V, V
=4.5V, I
=10V, I
D
=250µA
D
D
DS
=0.17A
GS
GS
=0.13A
=0
=0, T
=0, T
j
j
=25°C
=150°C
at minimum footprint
GS
= V
j
DS
= 25 °C, unless otherwise specified
Rev. 1.41
Page 2
Symbol
V
V
I
I
R
R
Symbol
R
DSS
GSS
(BR)DSS
GS(th)
DS(on)
DS(on)
thJA
min.
min.
100
0.8
-
-
-
-
-
-
Values
Values
typ.
typ.
1.4
4
3
-
-
-
-
-
max.
max.
0.01
350
1.8
10
10
2010-05-12
5
6
-
BSS123
Unit
V
µA
nA
Unit
K/W

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