BSS138N L6433 Infineon Technologies, BSS138N L6433 Datasheet - Page 5
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BSS138N L6433
Manufacturer Part Number
BSS138N L6433
Description
MOSFET N-CH 60V 230MA SOT-23
Manufacturer
Infineon Technologies
Series
SIPMOS®r
Datasheet
1.BSS138N_L6433.pdf
(9 pages)
Specifications of BSS138N L6433
Package / Case
SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
3.5 Ohm @ 230mA, 10V
Drain To Source Voltage (vdss)
60V
Current - Continuous Drain (id) @ 25° C
230mA
Vgs(th) (max) @ Id
1.4V @ 250µA
Gate Charge (qg) @ Vgs
1.4nC @ 10V
Input Capacitance (ciss) @ Vds
41pF @ 25V
Power - Max
360mW
Mounting Type
Surface Mount
Minimum Operating Temperature
- 55 C
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
3.5 Ohm @ 10 V
Drain-source Breakdown Voltage
60 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
0.23 A
Power Dissipation
360 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
SP000247294
Rev. 2.82
5 Typ. output characteristics
I
parameter: V
7 Typ. transfer characteristics
I
D
D
=f(V
=f(V
0.6
0.5
0.4
0.3
0.2
0.1
0.6
0.5
0.4
0.3
0.2
0.1
DS
0
GS
0
); T
0
0
); |V
j
=25 °C
GS
DS
|>2|I
V 10
1
1
D
V 7
|R
DS(on)max
2
2
V 5
V
V
DS
GS
[V]
[V]
V 4.5
3
3
4
4
V 2.9
V 3.2
V 3.5
V 4
page 5
5
5
6 Typ. drain-source on resistance
R
parameter: V
8 Typ. forward transconductance
g
fs
DS(on)
=f(I
0.35
0.25
0.15
0.05
0.4
0.3
0.2
0.1
10
D
0
=f(I
8
6
4
2
0
0.00
); T
0
D
j
); T
=25 °C
GS
j
=25 °C
0.10
0.1
2.9 V
0.2
0.20
3.2 V
I
I
D
D
[A]
[A]
3.5 V
0.3
0.30
0.4
BSS138N
0.40
4 V
10 V
4.5 V
7 V
5 V
2009-02-11
0.5