BSS138N L6433 Infineon Technologies, BSS138N L6433 Datasheet - Page 4
![no-image](/images/manufacturer_photos/0/3/327/infineon_technologies_sml.jpg)
BSS138N L6433
Manufacturer Part Number
BSS138N L6433
Description
MOSFET N-CH 60V 230MA SOT-23
Manufacturer
Infineon Technologies
Series
SIPMOS®r
Datasheet
1.BSS138N_L6433.pdf
(9 pages)
Specifications of BSS138N L6433
Package / Case
SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
3.5 Ohm @ 230mA, 10V
Drain To Source Voltage (vdss)
60V
Current - Continuous Drain (id) @ 25° C
230mA
Vgs(th) (max) @ Id
1.4V @ 250µA
Gate Charge (qg) @ Vgs
1.4nC @ 10V
Input Capacitance (ciss) @ Vds
41pF @ 25V
Power - Max
360mW
Mounting Type
Surface Mount
Minimum Operating Temperature
- 55 C
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
3.5 Ohm @ 10 V
Drain-source Breakdown Voltage
60 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
0.23 A
Power Dissipation
360 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
SP000247294
Rev. 2.82
1 Power dissipation
P
3 Safe operating area
I
parameter: t
D
tot
=f(V
=f(T
10
10
10
0.4
0.3
0.2
0.1
10
10
0
DS
-1
-2
-3
1
0
A
0
); T
)
1
limited by on-state
resistance
A
p
=25 °C; D =0
40
T
V
A
DS
80
10
[°C]
[V]
120
100 ms
100 µs
10 ms
1 ms
DC
10 µs
160
100
page 4
2 Drain current
I
4 Max. transient thermal impedance
Z
parameter: D =t
D
thJA
=f(T
0.25
0.15
0.05
=f(t
0.2
0.1
10
10
10
10
A
0
3
2
1
0
); V
10
p
0
)
-5
0.5
0.02
0.1
0.2
0.05
0.01
GS
single pulse
10
≥10 V
-4
p
/T
10
40
-3
10
-2
T
t
A
10
p
80
[°C]
[s]
-1
10
0
10
120
1
BSS138N
2009-02-11
160