BSS138N L6433 Infineon Technologies, BSS138N L6433 Datasheet - Page 2
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BSS138N L6433
Manufacturer Part Number
BSS138N L6433
Description
MOSFET N-CH 60V 230MA SOT-23
Manufacturer
Infineon Technologies
Series
SIPMOS®r
Datasheet
1.BSS138N_L6433.pdf
(9 pages)
Specifications of BSS138N L6433
Package / Case
SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
3.5 Ohm @ 230mA, 10V
Drain To Source Voltage (vdss)
60V
Current - Continuous Drain (id) @ 25° C
230mA
Vgs(th) (max) @ Id
1.4V @ 250µA
Gate Charge (qg) @ Vgs
1.4nC @ 10V
Input Capacitance (ciss) @ Vds
41pF @ 25V
Power - Max
360mW
Mounting Type
Surface Mount
Minimum Operating Temperature
- 55 C
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
3.5 Ohm @ 10 V
Drain-source Breakdown Voltage
60 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
0.23 A
Power Dissipation
360 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
SP000247294
Rev. 2.82
Parameter
Thermal characteristics
Thermal resistance,
junction - minimal footprint
Electrical characteristics, at T
Static characteristics
Drain-source breakdown voltage
Gate threshold voltage
Drain-source leakage current
Gate-source leakage current
Drain-source on-state resistance
Transconductance
j
=25 °C, unless otherwise specified
Symbol Conditions
R
V
V
I
I
R
g
D (off)
GSS
fs
(BR)DSS
GS(th)
thJA
DS(on)
V
V
V
V
V
V
V
V
V
V
|V
I
D
page 2
GS
GS
DS
GS
DS
GS
GS
GS
GS
GS
=0.18 A
DS
=60 V,
=60 V,
= 0 V, I
=V
=0 V, T
=0 V, T
=20 V, V
=4.5 V, I
=4.5 V, I
=10 V, I
|>2|I
DS
, I
D
|R
D
D
j
j
=25 °C
=150 °C
D
=250 µA
=26 µA
D
D
DS
DS(on)max
=0.23 A
=0.03 A
=0.19 A
=0 V
,
min.
0.6
0.1
60
-
-
-
-
-
-
-
Values
typ.
1.0
3.3
3.5
2.2
0.2
1
-
-
-
-
max.
350
1.4
0.1
4.0
6.0
3.5
10
5
-
-
BSS138N
Unit
K/W
V
µA
nA
Ω
S
2009-02-11