2SK3842(TE24L,Q) Toshiba, 2SK3842(TE24L,Q) Datasheet - Page 3

• Manufacturer Part Number: 2SK3842(TE24L,Q)
• Description: MOSFET N-CH 60V 75A SC-97
• Manufacturer: Toshiba

Specifications of 2SK3842(TE24L,Q)

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 5.8 mOhm @ 38A, 10V
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 75A
• Vgs(th) (max) @ Id: 4V @ 1mA
• Gate Charge (qg) @ Vgs: 196nC @ 10V
• Input Capacitance (ciss) @ Vds: 12400pF @ 10V
• Power - Max: 125W
• Mounting Type: Surface Mount
• Package / Case: 2-9F1B
• Configuration: Single Dual Source
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.0058 Ohms
• Drain-source Breakdown Voltage: 60 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 75 A
• Power Dissipation: 125 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

1000
100
160
120
100
80
60
40
20
80
40
10
0
0
1
1
0
0
Common source
V DS = 20 V
Pulse test
6.5
Common source
V DS = 20 V
Pulse test
7.0
8.0
10
0.4
Drain-source voltage V
Gate-source voltage V
2
Drain current I
10
0.8
5.8
4
⎪Y
25
I
I
D
D
6.0
fs
Tc = −55°C
– V
– V
100
⎪ − I
DS
GS
Tc = −55°C
1.2
D
6
D
100
5.6
100
GS
DS
(A)
Common source
Tc = 25°C
pulse test
25
V GS = 4.5 V
(V)
(V)
1.6
8
5.2
5.4
5.0
1000
2.0
10
3
200
160
120
100
1.0
0.8
0.6
0.4
0.2
80
40
10
0
0
1
1
0
0
Common source
Tc = 25°C
Pulse test
7.0
8.0
10
Drain-source voltage V
1
4
Gate-source voltage V
Drain current I
10
6.3
R
6.5
V
DS (ON)
2
8
I
DS
D
– V
– V
DS
V GS = 10 V
GS
− I
6.0
12
3
D
D
100
Common source
Tc = 25°C
Pulse test
GS
DS
(A)
5.8
Common source
Tc = 25°C
pulse test
(V)
(V)
V GS = 4.5 V
16
4
I D = 75 A
5.6
2009-09-29
38
19
2SK3842
5.4
5.2
5.0
1000
20
5