2SK3842(TE24L,Q) Toshiba, 2SK3842(TE24L,Q) Datasheet

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2SK3842(TE24L,Q)

Manufacturer Part Number
2SK3842(TE24L,Q)
Description
MOSFET N-CH 60V 75A SC-97
Manufacturer
Toshiba
Datasheet

Specifications of 2SK3842(TE24L,Q)

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
5.8 mOhm @ 38A, 10V
Drain To Source Voltage (vdss)
60V
Current - Continuous Drain (id) @ 25° C
75A
Vgs(th) (max) @ Id
4V @ 1mA
Gate Charge (qg) @ Vgs
196nC @ 10V
Input Capacitance (ciss) @ Vds
12400pF @ 10V
Power - Max
125W
Mounting Type
Surface Mount
Package / Case
2-9F1B
Configuration
Single Dual Source
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.0058 Ohms
Drain-source Breakdown Voltage
60 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
75 A
Power Dissipation
125 W
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Switching Regulator Applications, DC-DC Converter and
Motor Drive Applications
Absolute Maximum Ratings
Thermal Characteristics
Low drain-source ON resistance: R
High forward transfer admittance: |Y
Low leakage current: I
Enhancement model: V
Drain-source voltage
Drain-gate voltage (R
Gate-source voltage
Drain current
Drain power dissipation (Tc = 25°C)
Single pulse avalanche energy
Avalanche current
Repetitive avalanche energy (Note 3)
Channel temperature
Storage temperature range
Note:
Thermal resistance, channel to case
Note 1: Ensure that the channel temperature does not exceed 150℃.
Note 2: V
Note 3: Repetitive rating: pulse width limited by maximum channel
This transistor is an electrostatic-sensitive device. Please handle with
caution.
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate
reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and
Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
temperature
Characteristics
DD
Characteristics
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSIII)
= 25 V, T
GS
DC
Pulse(t
= 20 kΩ)
ch
DSS
th
(Note 1)
(Note 1)
= 25°C (initial), L = 78 μH, R
= 2.0 to 4.0 V (V
< =
(Note 2)
= 100 μA (max) (V
1 ms)
DS (ON)
(Ta = 25°C)
Symbol
V
V
V
fs
E
E
T
I
I
T
DGR
P
DSS
GSS
DP
AR
I
| = 93 S (typ.)
AS
AR
stg
D
ch
R
D
2SK3842
Symbol
th (ch-c)
DS
=4.6 mΩ (typ.)
DS
= 10 V, I
= 60 V)
−55 to150
Rating
G
12.5
±20
300
125
322
150
60
60
75
75
D
1
= 25 Ω, I
Max
= 1 mA)
1.0
AR
Unit
mJ
mJ
°C/W
°C
°C
W
= 75 A
V
V
V
A
A
Unit
Weight: 0.74 g (typ.)
JEDEC
JEITA
TOSHIBA
Notice:
Please use the S1 pin for gate
input signal return. Make
sure that the main current
flows into S2 pin.
Circuit Configuration
1
2
2-9F1B
SC-97
2009-09-29
2SK3842
4
3
Unit: mm

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2SK3842(TE24L,Q) Summary of contents

Page 1

... Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). ...

Page 2

... Labels. Not underlined: [[Pb]]/INCLUDES > MCV Underlined: [[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]] Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS compatibility of Product. The RoHS is the Directive 2002/95/EC of the European Parliament and of the Council of 27 January 2003 on the restriction of the use of certain hazardous substances in electrical and electronic equipment ...

Page 3

I – 100 Common source 10 6 25°C 5.8 5.6 8.0 pulse test 80 7 0.4 0.8 1.2 1.6 Drain-source voltage V (V) DS ...

Page 4

(ON) 10 Common source Pulse test −80 −80 − Case temperature Tc (°C) Capacitance – V ...

Page 5

Duty = 0.5 0.2 0.1 0.1 0.05 0.01 0.01 10 μ 100 μ Safe operating area 1000 500 I D max (pulsed) * 100 μs * 300 I D max (continuous 100 ...

Page 6

... Product shall not be used for or incorporated into any products or systems whose manufacture, use, or sale is prohibited under any applicable laws or regulations. • The information contained herein is presented only as guidance for Product use. No responsibility is assumed by TOSHIBA for any infringement of patents or any other intellectual property rights of third parties that may result from the use of Product. No license to any intellectual property right is granted by this document, whether express or implied, by estoppel or otherwise. • ...

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