2SK3842(TE24L,Q) Toshiba, 2SK3842(TE24L,Q) Datasheet - Page 2

• Manufacturer Part Number: 2SK3842(TE24L,Q)
• Description: MOSFET N-CH 60V 75A SC-97
• Manufacturer: Toshiba

Specifications of 2SK3842(TE24L,Q)

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 5.8 mOhm @ 38A, 10V
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 75A
• Vgs(th) (max) @ Id: 4V @ 1mA
• Gate Charge (qg) @ Vgs: 196nC @ 10V
• Input Capacitance (ciss) @ Vds: 12400pF @ 10V
• Power - Max: 125W
• Mounting Type: Surface Mount
• Package / Case: 2-9F1B
• Configuration: Single Dual Source
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.0058 Ohms
• Drain-source Breakdown Voltage: 60 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 75 A
• Power Dissipation: 125 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Electrical Characteristics
Source-Drain Ratings and Characteristics
Marking
Gate leakage current
Drain cut-OFF current
Drain-source breakdown voltage
Gate threshold voltage
Drain-source ON resistance
Forward transfer admittance
Input capacitance
Reverse transfer capacitance
Output capacitance
Switching time
Total gate charge
(gate-source plus gate-drain)
Gate-source charge
Gate-drain (“miller”) charge
Note 4: Connect the S1 and S2 pins together, and ground them except during switching time measurement.
Continuous drain reverse current (Note 1, Note 5)
Pulse drain reverse current
Continuous drain reverse current (Note 1, Note 5)
Pulse drain reverse current
Forward voltage (diode)
Reverse recovery time
Reverse recovery charge
Note 5: Current flowing between the drain and the S1 pin, when open the S2 pin is left open.
Unless otherwise specified, connect the S1 and S2 pins together, and ground them.
K3842
Characteristics
Characteristics
Rise time
Turn-ON time
Fall time
Turn-OFF time
Part No. (or abbreviation code)
Lot No.
Note 4
(Note 1,Note 5)
(Note 1,Note 5)
(Note 4)
V
V
R
Symbol
(BR) DSS
(BR) DSX
DS (ON)
⎪Y
I
I
C
C
C
Q
Q
GSS
DSS
V
t
t
Q
oss
t
on
off
rss
t
iss
gs
gd
th
fs
r
f
g
⎪
(Ta = 25°C)
Note 4: A line under a Lot No. identifies the indication of product
Please contact your TOSHIBA sales representative for details as to
environmental matters such as the RoHS compatibility of Product.
The RoHS is the Directive 2002/95/EC of the European Parliament
and of the Council of 27 January 2003 on the restriction of the use of
certain hazardous substances in electrical and electronic equipment.
Symbol
Duty < = 1%, t
V
V
I
I
V
V
V
V
V
V
V
I
I
D
D
I
DRP
I
DRP
GS
DS
DS
GS
DS
DS
DD
DR
DR
DS2F
GS
Q
t
= 10 mA, V
= 10 mA, V
10 V
rr
rr
0 V
1
2
= 60 V, V
= 10 V, I
= 10 V, I
= 10 V, V
= ±16 V, V
= 10 V, I
∼ − 48 V, V
1
2
Labels.
Not underlined: [[Pb]]/INCLUDES > MCV
Underlined: [[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]]
2
(Note 5) (Ta = 25°C)
I
I
dI
DR
DR
w
Test Condition
DR
D
D
D
GS
GS
GS
GS
= 10 μs
GS
1 = 75 A, V
= 1 mA
= 38 A
= 75 A, V
DS
= 38 A
/dt = 50 A/μs
= 0 V
= −20 V
= 0 V
= 0 V, f = 1 MHz
= 10 V, I
Test Condition
= 0 V
I
D
= 38 A
V
⎯
⎯
⎯
⎯
GS
DD
GS
D
R
= 0 V,
= 75 A
∼ − 30 V
= 0 V
L
= 0.79 Ω
V
OUT
Min
Min
2.0
60
35
46
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
12400
1100
Typ.
Typ.
700
200
196
148
4.6
⎯
⎯
⎯
⎯
⎯
93
18
45
35
48
70
77
⎯
⎯
⎯
⎯
⎯
2009-09-29
2SK3842
Max
−1.7
Max
±10
100
300
4.0
5.8
75
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
1
4
Unit
Unit
mΩ
μA
μA
nC
nC
pF
ns
ns
V
V
S
A
A
A
A
V