2SK3935(Q,M) Toshiba, 2SK3935(Q,M) Datasheet - Page 5

• Manufacturer Part Number: 2SK3935(Q,M)
• Description: MOSFET N-CH 450V 17A SC-67
• Manufacturer: Toshiba

Specifications of 2SK3935(Q,M)

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 250 mOhm @ 8.5A, 10V
• Drain To Source Voltage (vdss): 450V
• Current - Continuous Drain (id) @ 25° C: 17A
• Vgs(th) (max) @ Id: 4V @ 1mA
• Gate Charge (qg) @ Vgs: 62nC @ 10V
• Input Capacitance (ciss) @ Vds: 3100pF @ 25V
• Power - Max: 50W
• Mounting Type: Through Hole
• Package / Case: 2-10U1B
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

0.01
100
0.1
10
1
1
I D max (CONTINUOUS)
I D max (PULSE) *
*: SINGLE NONPETITIVE
Curves must be derated linearly
with increase in temperature
PULSE
Tc = 25°C
DRAIN−SOURCE VOLTAGE V
DC OPERATION
SAFE OPERATING AREA
Tc = 25℃
0.001
0.01
10
0.1
10
1
10μ
Duty=0.5
0.02
0.01
0.2
0.1
0.05
1 ms *
100
V DSS max
100μ
DS
100 μs *
(V)
SINGLE PULSE
1000
1m
PULSE WIDTH t
r
th
5
10m
– t
R
V
w
DD
G
1000
= 25 Ω
800
600
400
200
= 90 V, L = 5.3 mH
0
w
25
−15 V
15 V
(s)
CHANNEL TEMPERATURE (INITIAL) T
100m
TEST CIRCUIT
50
P DM
Duty = t/T
R th (ch-c) = 2.5°C/W
75
t
E
1
AS
T
Ε AS
– T
V
ch
DD
100
=
B
WAVE FORM
1
2
VDSS
I
⋅
10
AR
L
⋅
2 I
125
⋅
⎛
⎜
⎜
⎝
B VDSS
ch
V
2009-09-29
(°C)
2SK3935
DS
B VDSS
150
−
V DD
⎞
⎟
⎟
⎠