2SK3935(Q,M) Toshiba, 2SK3935(Q,M) Datasheet

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2SK3935(Q,M)

Manufacturer Part Number
2SK3935(Q,M)
Description
MOSFET N-CH 450V 17A SC-67
Manufacturer
Toshiba
Datasheet

Specifications of 2SK3935(Q,M)

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
250 mOhm @ 8.5A, 10V
Drain To Source Voltage (vdss)
450V
Current - Continuous Drain (id) @ 25° C
17A
Vgs(th) (max) @ Id
4V @ 1mA
Gate Charge (qg) @ Vgs
62nC @ 10V
Input Capacitance (ciss) @ Vds
3100pF @ 25V
Power - Max
50W
Mounting Type
Through Hole
Package / Case
2-10U1B
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Switching Regulator Applications
Absolute Maximum Ratings
Thermal Characteristics
Low drain-source ON resistance:
High forward transfer admittance:
Low leakage current:
Enhancement model: V
Drain-source voltage
Drain-gate voltage (R
Gate-source voltage
Drain current
Drain power dissipation
Single pulse avalanche energy
Avalanche current
Repetitive avalanche energy (Note 3)
Channel temperature
Storage temperature range
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
Thermal resistance, channel to case
Thermal resistance, channel to
ambient
Note 1: Ensure that the channel temperature does not exceed 150°C during
Note 2: V
Note 3: Repetitive rating: pulse width limited by maximum channel temperature.
This transistor is an electrostatic-sensitive device. Handle with care.
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability
Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e.
reliability test report and estimated failure rate, etc).
use of the device.
DD
Characteristic
Characteristic
= 90 V, T
TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (π-MOSVI)
GS
DC
Pulse (Note 1)
= 20 kΩ)
I
ch
DSS
th
= 25°C (initial), L = 5.3 mH, R
(Note 1)
(Note 2)
= 2.0 to 4.0 V (V
= 100 μA (max) (V
(Ta = 25°C)
R
R
Symbol
Symbol
th (ch−c)
th (ch−a)
R
|Y
V
V
V
E
E
T
I
I
T
DGR
P
GSS
DS (ON)
DSS
I
DP
AR
stg
fs
AS
AR
D
ch
D
2SK3935
| = 10 S (typ.)
DS
= 10 V, I
DS
= 0.18 Ω (typ.)
= 450 V)
−55 to 150
Rating
Max
62.5
450
450
±30
919
150
2.5
17
68
50
17
D
G
5
1
= 1 mA)
= 25 Ω, I
°C / W
°C / W
AR
Unit
Unit
mJ
mJ
°C
°C
W
V
V
V
A
A
A
= 17 A
Weight: 1.7 g (typ.)
JEDEC
JEITA
TOSHIBA
1: Gate
2: Drain
3: Source
1
2-10U1B
SC-67
2009-09-29
2SK3935
Unit: mm
2
3

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2SK3935(Q,M) Summary of contents

Page 1

... Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. ...

Page 2

... Note 4: A line under a Lot No. identifies the indication of product Labels. [[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]] Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS compatibility of Product. The RoHS is the Directive 2002/95/EC of the European Parliament and of the Council of 27 January 2003 on the restriction of the use of certain hazardous substances in electrical and electronic equipment ...

Page 3

I – COMMON 10 6.8 SOURCE Tc = 25°C 16 PULSE TEST DRAIN−SOURCE VOLTAGE – COMMON SOURCE V DS ...

Page 4

R – (ON) 0.6 COMMON SOURCE PULSE TEST 0 3.8 0.2 0 −80 − CASE TEMPERATURE Tc (°C) C – 10000 1000 100 ...

Page 5

Duty=0.5 0.2 0.1 0.1 0.05 0.02 0.01 0.01 0.001 10μ 100μ SAFE OPERATING AREA 100 I D max (PULSE) * 100 μ max (CONTINUOUS OPERATION 25℃ 0.1 ...

Page 6

... Product shall not be used for or incorporated into any products or systems whose manufacture, use, or sale is prohibited under any applicable laws or regulations. • The information contained herein is presented only as guidance for Product use. No responsibility is assumed by TOSHIBA for any infringement of patents or any other intellectual property rights of third parties that may result from the use of Product. No license to any intellectual property right is granted by this document, whether express or implied, by estoppel or otherwise. • ...

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