2SK3935(Q,M) Toshiba, 2SK3935(Q,M) Datasheet - Page 3

• Manufacturer Part Number: 2SK3935(Q,M)
• Description: MOSFET N-CH 450V 17A SC-67
• Manufacturer: Toshiba

Specifications of 2SK3935(Q,M)

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 250 mOhm @ 8.5A, 10V
• Drain To Source Voltage (vdss): 450V
• Current - Continuous Drain (id) @ 25° C: 17A
• Vgs(th) (max) @ Id: 4V @ 1mA
• Gate Charge (qg) @ Vgs: 62nC @ 10V
• Input Capacitance (ciss) @ Vds: 3100pF @ 25V
• Power - Max: 50W
• Mounting Type: Through Hole
• Package / Case: 2-10U1B
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

100
0.1
20
16
12
50
40
30
20
10
10
8
4
0
0
1
0.1
0
0
COMMON
SOURCE
Tc = 25°C
PULSE TEST
COMMON SOURCE
V DS = 20 V
PULSE TEST
COMMON SOURCE
V DS = 20 V
PULSE TEST
DRAIN−SOURCE VOLTAGE V
GATE−SOURCE VOLTAGE V
2
2
7
8
DRAIN CURRENT I
1
Tc = −55°C
10
4
4
I
I
⎪Y
D
D
fs
– V
– V
100
⎪ – I
DS
GS
6.8
D
6
6
25
10
25
D
(A)
GS
DS
100
Tc = −55°C
8
8
V GS = 5 V
(V)
(V)
6.6
6.4
6.2
5.8
5.4
6
100
10
10
3
0.01
0.1
10
50
40
30
20
10
8
6
4
2
0
1
0
0
0
1
COMMON SOURCE
Tc = 25°C
PULSE TEST
COMMON SOURCE
Tc = 25°C
PULSE TEST
GATE−SOURCE VOLTAGE V
DRAIN−SOURCE VOLTAGE V
4
4
DRAIN CURRENT I
R
V GS = 10 V
V
DS (ON)
8
8
I
DS
D
– V
– V
10
DS
GS
− I
12
12
COMMON SOURCE
Tc = 25°C
PULSE TEST
D
D
(A)
GS
DS
16
16
V GS = 5 V
(V)
(V)
I D = 15 A
10
2009-09-29
2SK3935
7.5
3.8
7.5
6.5
6
7
8
100
20
20