TK15X60U(TE24L,Q) Toshiba, TK15X60U(TE24L,Q) Datasheet - Page 5

• Manufacturer Part Number: TK15X60U(TE24L,Q)
• Description: MOSFET N-CH 600V 15A TFP
• Manufacturer: Toshiba

Specifications of TK15X60U(TE24L,Q)

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 300 mOhm @ 7.5A, 10V
• Drain To Source Voltage (vdss): 600V
• Current - Continuous Drain (id) @ 25° C: 15A
• Vgs(th) (max) @ Id: 5V @ 1mA
• Gate Charge (qg) @ Vgs: 17nC @ 10V
• Input Capacitance (ciss) @ Vds: 950pF @ 10V
• Power - Max: 125W
• Mounting Type: Surface Mount
• Package / Case: *
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.3 Ohms
• Drain-source Breakdown Voltage: 600 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 15 A
• Power Dissipation: 125 W
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

0.001
0.01
100
0.1
10
1
0.1
I D max (Continuous)
I D max (Pulse) *
* Single nonrepetitive
Curves must be derated
linearly with increase in
temperature.
pulse Tc = 25°C
Drain−source voltage V
1
Safe operating area
0.01
0.1
10
1
10μ
0.05
0.2
0.1
Duty=0.5
DC operation
Tc = 25°C
10
0.02 0.01
100μ
1 ms *
DS
100
V DSS max
100 μs *
(V)
Single pulse
1ｍ
1000
Pulse width t
r
th
5
10ｍ
– t
w
w
R
V
DD
G
(s)
= 25 Ω
100
= 90 V, L = 1.17mH
80
60
40
20
0
25
100ｍ
−15 V
15 V
Channel temperature (initial) T
TEST CIRCUIT
P DM
50
Duty = t/T
R th (ch-c) = 1.0°C/W
1
t
T
75
E
AS
Ε AS
– T
V
ch
100
DD
=
10
B
1
2
VDSS
I
WAVEFORM
⋅
AR
L
⋅
2 I
ch
125
TK15X60U
⋅
⎛
⎜
⎜
⎝
B VDSS
2009-07-07
(°C)
V
DS
B VDSS
150
−
V DD
⎞
⎟
⎟
⎠