TK15X60U(TE24L,Q) Toshiba, TK15X60U(TE24L,Q) Datasheet - Page 5
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TK15X60U(TE24L,Q)
Manufacturer Part Number
TK15X60U(TE24L,Q)
Description
MOSFET N-CH 600V 15A TFP
Manufacturer
Toshiba
Datasheet
1.TK15X60UTE24LQ.pdf
(6 pages)
Specifications of TK15X60U(TE24L,Q)
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
300 mOhm @ 7.5A, 10V
Drain To Source Voltage (vdss)
600V
Current - Continuous Drain (id) @ 25° C
15A
Vgs(th) (max) @ Id
5V @ 1mA
Gate Charge (qg) @ Vgs
17nC @ 10V
Input Capacitance (ciss) @ Vds
950pF @ 10V
Power - Max
125W
Mounting Type
Surface Mount
Package / Case
*
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.3 Ohms
Drain-source Breakdown Voltage
600 V
Gate-source Breakdown Voltage
+/- 30 V
Continuous Drain Current
15 A
Power Dissipation
125 W
Mounting Style
SMD/SMT
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
0.001
0.01
100
0.1
10
1
0.1
I D max (Continuous)
I D max (Pulse) *
* Single nonrepetitive
Curves must be derated
linearly with increase in
temperature.
pulse Tc = 25°C
Drain−source voltage V
1
Safe operating area
0.01
0.1
10
1
10μ
0.05
0.2
0.1
Duty=0.5
DC operation
Tc = 25°C
10
0.02 0.01
100μ
1 ms *
DS
100
V DSS max
100 μs *
(V)
Single pulse
1m
1000
Pulse width t
r
th
5
10m
– t
w
w
R
V
DD
G
(s)
= 25 Ω
100
= 90 V, L = 1.17mH
80
60
40
20
0
25
100m
−15 V
15 V
Channel temperature (initial) T
TEST CIRCUIT
P DM
50
Duty = t/T
R th (ch-c) = 1.0°C/W
1
t
T
75
E
AS
Ε AS
– T
V
ch
100
DD
=
10
B
1
2
VDSS
I
WAVEFORM
⋅
AR
L
⋅
2 I
ch
125
TK15X60U
⋅
⎛
⎜
⎜
⎝
B VDSS
2009-07-07
(°C)
V
DS
B VDSS
150
−
V DD
⎞
⎟
⎟
⎠