tk15x60u TOSHIBA Semiconductor CORPORATION, tk15x60u Datasheet

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tk15x60u

Manufacturer Part Number
tk15x60u
Description
Toshiba Field Effect Transistor Silicon N Channel Mos Type Dtmos?
Manufacturer
TOSHIBA Semiconductor CORPORATION
Datasheet
Switching Regulator Applications
Absolute Maximum Ratings
Thermal Characteristics
This transistor is an electrostatic sensitive device. Please handle with caution.
Low drain-source ON resistance: R
High forward transfer admittance: ⎪Y
Low leakage current: I
Enhancement-mode: V
Drain-source voltage
Gate-source voltage
Drain current
Drain power dissipation (Tc = 25°C)
Single pulse avalanche energy
Avalanche current
Repetitive avalanche energy (Note 3)
Channel temperature
Storage temperature range
Note: Using continuously under heavy loads (e.g. the application of
Thermal resistance, channel to case
Note 1: Please use devices on conditions that the channel temperature is below 150°C.
Note 2: V
Note 3: Repetitive rating: pulse width limited by maximum channel temperature
high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to
decrease
temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Characteristics
DD
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (DTMOSⅡ)
Characteristics
= 90 V, T
in
DC
Pulse (Note 1)
ch
DSS
th
the
= 25°C (initial), L = 1.17 mH, R
= 3.0 to 5.0 V (V
(Note 1)
(Note 2)
= 100 μA (max) (V
reliability
DS (ON)
(Ta = 25°C)
Symbol
V
V
fs
TK15X60U
E
E
T
I
I
T
P
GSS
DSS
I
DP
AR
⎪ = 8.5 S (typ.)
AS
AR
stg
D
ch
R
D
significantly
Symbol
DS
th (ch-c)
= 0.25 Ω (typ.)
= 10 V, I
DS
= 600 V)
−55 to 150
Rating
12.5
600
±30
125
150
D
15
30
81
11
1
even
G
= 1 mA)
Max
1.0
= 25 Ω, I
if
Unit
AR
mJ
mJ
°C
°C
°C/W
W
V
V
A
A
Unit
the
= 11 A
operating
Weight : 0.74 g (typ.)
JEDEC
JEITA
TOSHIBA
conditions
1
2-9F1C
TK15X60U
(i.e.
2010-08-20
operating
Unit: mm
4
3

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tk15x60u Summary of contents

Page 1

... 12 150 °C ch −55 to 150 T °C stg significantly even if the Symbol Max Unit R 1.0 °C/W th (ch- Ω TK15X60U Unit: mm ⎯ JEDEC ⎯ JEITA TOSHIBA 2-9F1C Weight : 0.74 g (typ.) operating conditions (i.e. operating 2010-08-20 ...

Page 2

... Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS compatibility of Product. The RoHS is Directive 2002/95/EC of the European Parliament and of the Council of 27 January 2003 on the restriction of the use of certain hazardous substances in electrical and electronic equipment 2 TK15X60U Min Typ. Max ⎯ ⎯ ...

Page 3

... Drain−source voltage Gate−source voltage V 10 Common source Tc = 25°C Pulse test 1 0.1 0.01 100 1 Drain current I 3 TK15X60U I – 8.5 Common source Tc = 25°C Pulse test 8 7 – Common source Tc = 25° ...

Page 4

... Common source rss Pulse test 0 −40 −80 100 (V) 500 V DS 400 300 200 100 0 160 0 Total gate charge Q 4 TK15X60U − -0.4 -0.8 -1.2 (V) DS − 120 200 160 Case temperature Tc (°C) ...

Page 5

... Pulse width t (s) w 100 100 μ Channel temperature (initial) T 1000 ( −15 V TEST CIRCUIT = 25 Ω 1.17mH TK15X60U Duty = t (ch-c) = 1.0°C – 100 125 150 (° VDSS ...

Page 6

... Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS compatibility of Product. Please use Product in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances, including without limitation, the EU RoHS Directive. TOSHIBA assumes no liability for damages or losses occurring as a result of noncompliance with applicable laws and regulations. 6 TK15X60U 2010-08-20 ...

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