TK15X60U(TE24L,Q) Toshiba, TK15X60U(TE24L,Q) Datasheet - Page 4

• Manufacturer Part Number: TK15X60U(TE24L,Q)
• Description: MOSFET N-CH 600V 15A TFP
• Manufacturer: Toshiba

Specifications of TK15X60U(TE24L,Q)

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 300 mOhm @ 7.5A, 10V
• Drain To Source Voltage (vdss): 600V
• Current - Continuous Drain (id) @ 25° C: 15A
• Vgs(th) (max) @ Id: 5V @ 1mA
• Gate Charge (qg) @ Vgs: 17nC @ 10V
• Input Capacitance (ciss) @ Vds: 950pF @ 10V
• Power - Max: 125W
• Mounting Type: Surface Mount
• Package / Case: *
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.3 Ohms
• Drain-source Breakdown Voltage: 600 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 15 A
• Power Dissipation: 125 W
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

10000
1000
100
200
150
100
0.8
0.6
0.4
0.2
10
50
−80
1
0
1
0
0.1
0
Common source
V GS = 10 V
Pulse test
Common source
V GS = 0 V
f = 1 MHz
Tc = 25°C
−40
Drain−source voltage V
Case temperature Tc (°C)
Case temperature Tc (°C)
40
0
1
R
DS (ON)
C – V
40
P
D
80
− Tc
DS
15
80
– Tc
7.5
10
120
DS
I D = 4 A
120
(V)
160
C rss
C iss
C oss
200
100
160
4
100
500
400
300
200
100
0.1
10
5
4
3
2
1
0
−80
0
1
0
0
Common source
V DS = 10 V
I D = 1 mA
Pulse test
V DS
Common source
Tc = 25°C
Pulse test
10,15
−40
Drain−source voltage V
5
Total gate charge Q
Case temperature Tc (°C)
6
Dynamic input/output
0
3
0.4
characteristics
I
12
V DD = 100V
DR
40
V
th
V GS
− V
1
− Tc
DS
80
200V
18
V GS = 0 V
0.8
g
120
DS
400V
Common source
I D = 15 A
Tc = 25°C
Pulse test
(nC)
24
(V)
160
TK15X60U
2009-07-07
200
1.2
30
20
16
12
8
4
0