2SK3309(TE24L,Q) Toshiba, 2SK3309(TE24L,Q) Datasheet - Page 5

• Manufacturer Part Number: 2SK3309(TE24L,Q)
• Description: MOSFET N-CH 450V 10A 2-10S2B
• Manufacturer: Toshiba

Specifications of 2SK3309(TE24L,Q)

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 650 mOhm @ 5A, 10V
• Drain To Source Voltage (vdss): 450V
• Current - Continuous Drain (id) @ 25° C: 10A
• Vgs(th) (max) @ Id: 5V @ 1mA
• Gate Charge (qg) @ Vgs: 23nC @ 10V
• Input Capacitance (ciss) @ Vds: 920pF @ 10V
• Power - Max: 65W
• Mounting Type: Surface Mount
• Package / Case: 2-10S2B
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.65 Ohms
• Drain-source Breakdown Voltage: 450 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 10 A
• Power Dissipation: 65 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

0.01
100
0.1
10
1
1
I D max
(continuous)
I D max (pulse) *
* Single nonrepetitive pulse
Curves must be derated
linearly with increase in
temperature.
Tc = 25°C
Drain-source voltage V
0.001
0.01
DC operation
0.1
Tc = 25°C
10
Safe operating area
10 μ
1
10
0.02
0.05
0.01
0.2
0.1
Duty = 0.5
1 ms *
100 μ
100
DS
V DSS max
Single pulse
100 μs *
(V)
1 m
1000
Pulse width t
r
th
10 m
– t
5
w
w
R
V
DD
G
(S)
= 25 Ω
= 90 V, L = 3.7 mH
400
300
200
100
−15 V
100 m
0
25
15 V
Test circuit
Channel temperature (initial) T
P DM
50
Duty = t/T
R th (ch-c) = 1.92°C/W
1
t
T
75
E
AS
Ε AS
– T
V
DD
=
ch
100
B
10
Wave form
2
1
VDSS
I
⋅
AR
L
⋅
2 I
ch
⋅
125
⎛
⎜
⎜
⎝
B VDSS
(°C)
V
DS
2006-11-06
B VDSS
2SK3309
150
−
V DD
⎞
⎟
⎟
⎠