2SK3309(TE24L,Q) Toshiba, 2SK3309(TE24L,Q) Datasheet - Page 2

• Manufacturer Part Number: 2SK3309(TE24L,Q)
• Description: MOSFET N-CH 450V 10A 2-10S2B
• Manufacturer: Toshiba

Specifications of 2SK3309(TE24L,Q)

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 650 mOhm @ 5A, 10V
• Drain To Source Voltage (vdss): 450V
• Current - Continuous Drain (id) @ 25° C: 10A
• Vgs(th) (max) @ Id: 5V @ 1mA
• Gate Charge (qg) @ Vgs: 23nC @ 10V
• Input Capacitance (ciss) @ Vds: 920pF @ 10V
• Power - Max: 65W
• Mounting Type: Surface Mount
• Package / Case: 2-10S2B
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.65 Ohms
• Drain-source Breakdown Voltage: 450 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 10 A
• Power Dissipation: 65 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Electrical Characteristics
Source-Drain Ratings and Characteristics
Marking
Gate leakage current
Gate -source breakdown voltage
Drain cut-off current
Drain-source breakdown voltage
Gate threshold voltage
Drain-source ON resistance
Forward transfer admittance
Input capacitance
Reverse transfer capacitance
Output capacitance
Switching time
Total gate charge
Gate-source charge
Gate-drain charge
Continuous drain reverse current (Note 1)
Pulse drain reverse current
Forward voltage (diode)
Reverse recovery time
Reverse recovery charge
K3309
Characteristics
※
Characteristics
Rise time
Turn-on time
Fall time
Turn-off time
Type
(Note 1)
※ Lot Number
(Ta = 25°C)
V
V
R
Symbol
(BR) GSS
(BR) DSS
DS (ON)
⎪Y
I
I
C
C
C
Q
Q
GSS
DSS
V
t
t
Q
oss
on
off
rss
t
t
iss
gs
gd
th
fs
r
f
Symbol
g
V
⎪
I
I
DRP
Q
DSF
DR
t
rr
rr
Month (starting from alphabet A)
Year
V
I
V
I
V
V
V
V
V
Duty < = 1%, t
G
D
V
GS
DS
DS
GS
DS
DS
DD
GS
= ±10 μA, V
= 10 mA, V
10 V
I
I
dI
0 V
DR
DR
= 450 V, V
= 10 V, I
= 10 V, I
= 10 V, V
= ±25 V, V
= 10 V, I
∼ − 360 V, V
DR
2
= 10 A, V
= 10 A, V
(Ta = 25°C)
/dt = 100 A/μs
(last number of the christian era)
Test Condition
w
D
D
D
GS
GS
DS
= 10 μs
Test Condition
GS
= 1 mA
= 5 A
DS
= 5 A
GS
= 0 V
GS
GS
= 0 V, f = 1 MHz
= 0 V
I
= 0 V
= 0 V
D
= 10 V, I
⎯
⎯
= 5 A
= 0 V
= 0 V,
V
DD
D
R
∼ − 200 V
= 10 A
L
= 40 Ω
V
OUT
450
550
Min
±30
Min
3.0
1.5
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
Typ.
0.48
Typ.
920
140
280
4.3
2.7
12
25
35
10
60
23
14
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
9
2006-11-06
2SK3309
0.65
−1.7
Max
Max
±10
100
5.0
⎯
⎯
⎯
⎯
⎯
10
40
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
Unit
Unit
nC
μC
μA
μA
pF
ns
ns
Ω
V
V
V
S
A
A
V