2SK3309(TE24L,Q) Toshiba, 2SK3309(TE24L,Q) Datasheet - Page 4

• Manufacturer Part Number: 2SK3309(TE24L,Q)
• Description: MOSFET N-CH 450V 10A 2-10S2B
• Manufacturer: Toshiba

Specifications of 2SK3309(TE24L,Q)

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 650 mOhm @ 5A, 10V
• Drain To Source Voltage (vdss): 450V
• Current - Continuous Drain (id) @ 25° C: 10A
• Vgs(th) (max) @ Id: 5V @ 1mA
• Gate Charge (qg) @ Vgs: 23nC @ 10V
• Input Capacitance (ciss) @ Vds: 920pF @ 10V
• Power - Max: 65W
• Mounting Type: Surface Mount
• Package / Case: 2-10S2B
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.65 Ohms
• Drain-source Breakdown Voltage: 450 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 10 A
• Power Dissipation: 65 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

10000
1000
100
100
2.0
1.6
1.2
0.8
0.4
10
80
60
40
20
−80
0
1
0
0.1
0
Common source
V GS = 10 V
Pulse test
Common
source
V GS = 0 V
f = 1 MHz
−40
40
Drain-source voltage V
Case temperature Tc
Case temperature Tc
1
Capacitance – V
0
R
80
DS (ON)
P
D
10
40
– Tc
– Tc
I D = 10 A
120
80
DS
DS
(°C)
(°C)
100
(V)
C oss
C rss
160
C iss
120
2.5
5
1000
160
200
4
0.01
500
400
300
200
100
100
0.1
10
−80
6
5
4
3
2
1
0
0
1
0
0
Common source
Tc = 25°C
Pulse test
10
Dynamic input/output characteristics
−0.2
−40
V DS
10
Drain-source voltage V
Case temperature Tc
Total gate charge Q
5
V GS
V DD = 90 V
3
−0.4
0
20
I
DR
1
V
th
−0.6
– V
40
360
– Tc
V GS = 0, −1 V
DS
180
30
−0.8
g
80
DS
Common source
V DS = 10 V
I D = 1 mA
Pulse test
(nC)
Common source
I D = 10 A
Tc = 25°C
Pulse test
(°C)
(V)
40
120
−1
2006-11-06
2SK3309
−1.2
160
50
20
16
12
8
4
0