STW77N65M5 STMicroelectronics, STW77N65M5 Datasheet - Page 7

• Manufacturer Part Number: STW77N65M5
• Description: MOSFET N-CH 650V 69A TO-247
• Manufacturer: STMicroelectronics
• Series: MDmesh™r

Specifications of STW77N65M5

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 38 mOhm @ 34.5A, 10V
• Drain To Source Voltage (vdss): 650V
• Current - Continuous Drain (id) @ 25° C: 69A
• Vgs(th) (max) @ Id: 5V @ 250µA
• Gate Charge (qg) @ Vgs: 200nC @ 10V
• Input Capacitance (ciss) @ Vds: 9800pF @ 100V
• Power - Max: 400W
• Mounting Type: Through Hole
• Package / Case: TO-247-3 (Straight Leads)
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.03 Ohms
• Drain-source Breakdown Voltage: 650 V
• Gate-source Breakdown Voltage: 25 V
• Continuous Drain Current: 69 A
• Power Dissipation: 400 W
• Maximum Operating Temperature: + 125 C
• Mounting Style: Through Hole
• Gate Charge Qg: 200 nC
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-10589-5; STW77N65M5

STW77N65M5
Figure 8.
Figure 10. Normalized gate threshold voltage
Figure 12. Source-drain diode forward
100000
10000
(norm)
V
1000
GS(th)
1.00
0.90
0.80
0.70
1.10
100
(pF)
(V)
V
10
1.2
1.0
0.2
0.8
0.6
0.4
C
SD
-50
1
0
0.1
0
Capacitance variations
vs temperature
characteristics
T
-25
J
=150°C
10
T
1
0
J
=-50°C
20
25
10
50
30
75
40
100
100
T
J
=25°C
50
V
T
I
SD
Doc ID 15322 Rev 3
DS
J
(°C)
AM04970v1
AM04974v1
AM04972v1
(A)
(V)
Ciss
Coss
Crss
Figure 9.
Figure 11. Normalized on resistance vs
Figure 13. Normalized B
(norm)
R
BV
(norm)
DS(on)
0.99
0.97
0.95
E
1.01
0.93
1.07
1.05
1.03
(µJ)
DSS
oss
40
30
25
2.1
1.9
1.5
0.7
0.5
35
15
10
1.7
1.3
1.1
0.9
20
5
0
-50
-50
0
Output capacitance stored energy
temperature
-25
-25
100
I
V
D
GS
= 34.5 A
0
0
200 300
= 10 V
I
D
25
25
= 1mA
Electrical characteristics
VDSS
50
50
400
75
75
vs temperature
500 600
100
100
125
T
J
(°C)
AM05501v1
AM04967v1
AM04971v1
V
T
J
DS
(°C)
(V)
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