STW77N65M5 STMicroelectronics, STW77N65M5 Datasheet - Page 6

• Manufacturer Part Number: STW77N65M5
• Description: MOSFET N-CH 650V 69A TO-247
• Manufacturer: STMicroelectronics
• Series: MDmesh™r

Specifications of STW77N65M5

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 38 mOhm @ 34.5A, 10V
• Drain To Source Voltage (vdss): 650V
• Current - Continuous Drain (id) @ 25° C: 69A
• Vgs(th) (max) @ Id: 5V @ 250µA
• Gate Charge (qg) @ Vgs: 200nC @ 10V
• Input Capacitance (ciss) @ Vds: 9800pF @ 100V
• Power - Max: 400W
• Mounting Type: Through Hole
• Package / Case: TO-247-3 (Straight Leads)
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.03 Ohms
• Drain-source Breakdown Voltage: 650 V
• Gate-source Breakdown Voltage: 25 V
• Continuous Drain Current: 69 A
• Power Dissipation: 400 W
• Maximum Operating Temperature: + 125 C
• Mounting Style: Through Hole
• Gate Charge Qg: 200 nC
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-10589-5; STW77N65M5

Electrical characteristics
2.1
6/14
Figure 2.
Figure 4.
Figure 6.
100
0.1
(A)
10
I
D
1
V
140
120
100
(V)
0.1
(A)
80
60
40
20
12
10
GS
I
D
0
6
4
2
8
0
0
0
V
V
Electrical characteristics (curves)
DS
Safe operating area
Output characteristics
Gate charge vs gate-source voltage Figure 7.
GS
=10V
5
50
1
10
100
V
I
DD
10
15
D
=34.5A
=520V
Tc=25°C
Tj=150°C
Single
pulse
150
20
100
25
200
7V
V
30
DS
V
6V
5V
Q
(V)
GS
Doc ID 15322 Rev 3
g
100µs
10µs
1ms
10ms
(nC)
AM04964v1
V
AM04965v1
AM04969v1
100
500
DS
400
300
200
0
(V)
Figure 3.
Figure 5.
R
0.015
0.035
0.030
0.025
0.020
DS(on)
140
120
100
0.01
(A)
(Ω)
80
60
40
20
I
D
0
0
0
Thermal impedance
Transfer characteristics
Static drain-source on resistance
10
2
V
DS
20
=25V
4
V
GS
30
=10V
6
40
8
50
STW77N65M5
10
60
V
GS
(V)
AM04966v1
AM04968v1
I
D
(A)