STW30N65M5 STMicroelectronics, STW30N65M5 Datasheet - Page 13

• Manufacturer Part Number: STW30N65M5
• Description: MOSFET N-CH 650V 22A TO-247
• Manufacturer: STMicroelectronics
• Series: MDmesh™r

Specifications of STW30N65M5

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 139 mOhm @ 11A, 10V
• Drain To Source Voltage (vdss): 650V
• Current - Continuous Drain (id) @ 25° C: 22A
• Vgs(th) (max) @ Id: 5V @ 250µA
• Gate Charge (qg) @ Vgs: 64nC @ 10V
• Input Capacitance (ciss) @ Vds: 2880pF @ 100V
• Power - Max: 140W
• Mounting Type: Through Hole
• Package / Case: TO-247
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.139 Ohms
• Drain-source Breakdown Voltage: 650 V
• Gate-source Breakdown Voltage: 3 V
• Continuous Drain Current: 22 A
• Power Dissipation: 140 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Gate Charge Qg: 64 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-10655-5; STW30N65M5

STB/F/I/P/W30N65M5
Dim.
øP
øR
A1
b1
b2
L1
L2
A
D
E
S
b
e
L
c
19.85
15.45
14.20
Min.
4.85
2.20
0.40
3.70
3.55
4.50
1.0
2.0
3.0
Doc ID 15331 Rev 2
TO-247 Mechanical data
18.50
mm.
5.45
5.50
Typ
Package mechanical data
20.15
15.75
14.80
Max.
5.15
2.60
1.40
2.40
3.40
0.80
4.30
3.65
5.50
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