STW30N65M5 STMicroelectronics, STW30N65M5 Datasheet - Page 10

MOSFET N-CH 650V 22A TO-247

STW30N65M5

Manufacturer Part Number
STW30N65M5
Description
MOSFET N-CH 650V 22A TO-247
Manufacturer
STMicroelectronics
Series
MDmesh™r
Datasheet

Specifications of STW30N65M5

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
139 mOhm @ 11A, 10V
Drain To Source Voltage (vdss)
650V
Current - Continuous Drain (id) @ 25° C
22A
Vgs(th) (max) @ Id
5V @ 250µA
Gate Charge (qg) @ Vgs
64nC @ 10V
Input Capacitance (ciss) @ Vds
2880pF @ 100V
Power - Max
140W
Mounting Type
Through Hole
Package / Case
TO-247
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.139 Ohms
Drain-source Breakdown Voltage
650 V
Gate-source Breakdown Voltage
3 V
Continuous Drain Current
22 A
Power Dissipation
140 W
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Gate Charge Qg
64 nC
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
497-10655-5
STW30N65M5
Package mechanical data
4
10/18
Package mechanical data
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK
specifications, grade definitions and product status are available at: www.st.com.
ECOPACKm is an ST trademark.
®
packages, depending on their level of environmental compliance. ECOPACK
Doc ID 15331 Rev 2
STB/F/I/P/W30N65M5
®

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