IXTK550N055T2 IXYS, IXTK550N055T2 Datasheet - Page 5

• Manufacturer Part Number: IXTK550N055T2
• Description: MOSFET N-CH 55V 550A TO-264
• Manufacturer: IXYS
• Series: TrenchT2™ GigaMOS™r
• Type: TrenchT2 GigaMOSr

Specifications of IXTK550N055T2

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 1.6 mOhm @ 100A, 10V
• Drain To Source Voltage (vdss): 55V
• Current - Continuous Drain (id) @ 25° C: 550A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 595nC @ 10V
• Input Capacitance (ciss) @ Vds: 40000pF @ 25V
• Power - Max: 1250W
• Mounting Type: Through Hole
• Package / Case: TO-264
• Product: MOSFET Gate Drivers
• Rise Time: 40 ns
• Fall Time: 230 ns
• Supply Current: 200 A
• Maximum Power Dissipation: 1250 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: Through Hole
• Maximum Turn-off Delay Time: 90 ns
• Maximum Turn-on Delay Time: 45 ns
• Minimum Operating Temperature: - 55 C
• Number Of Drivers: Single
• Number Of Outputs: 1
• Output Current: 550 A
• Output Voltage: 55 V
• Vdss, Max, (v): 55
• Id(cont), Tc=25°c, (a): 550
• Rds(on), Max, Tj=25°c, (?): 0.0016
• Ciss, Typ, (pf): 40000
• Qg, Typ, (nc): 595
• Trr, Typ, (ns): 100
• Pd, (w): 1250
• Rthjc, Max, (k/w): 0.12
• Package Style: TO-264
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

© 2009 IXYS CORPORATION, All Rights Reserved
350
300
250
200
150
100
400
350
300
250
200
150
100
48
46
44
42
40
38
36
34
32
50
50
0
0
25
40
1
R
V
T
V
t
DS
G
J
35
r
DS
Fig. 17. Resistive Turn-off Switching Times
= 1Ω , V
Fig. 15. Resistive Turn-on Switching Times
= 125ºC, V
1.5
60
= 27.5V
= 27.5V
I
D
Fig. 13. Resistive Turn-on Rise Time
45
= 200A
GS
80
2
t
= 10V
GS
d(on)
= 10V
vs. Junction Temperature
55
T
T
vs. Gate Resistance
J
J
- - - -
vs. Drain Current
= 125ºC
= 125ºC
100
T
2.5
J
I
- Degrees Centigrade
D
I
65
D
R
= 200A
- Amperes
G
I
120
- Ohms
D
3
= 100A
75
140
3.5
T
t
R
V
85
J
f
DS
G
= 25ºC
I
= 1Ω, V
D
= 27.5V
= 100A
160
95
4
GS
t
= 10V
d(off)
105
180
4.5
- - - -
115
200
5
180
160
140
120
100
80
60
40
120
105
90
75
60
45
30
15
0
125
500
400
300
200
100
350
300
250
200
150
100
48
46
44
42
40
38
36
34
32
50
0
0
40
25
1
R
V
T
V
t
G
DS
f
J
DS
Fig. 16. Resistive Turn-off Switching Times
35
= 125ºC, V
Fig. 18. Resistive Turn-off Switching Times
= 1Ω , V
1.5
= 27.5V
60
= 27.5V
I
D
45
Fig. 14. Resistive Turn-on Rise Time
= 100A
GS
2
GS
t
= 10V
80
vs. Junction Temperature
d(off)
= 10V
55
vs. Gate Resistance
T
- - - -
I
J
2.5
D
- Degrees Centigrade
= 200A
vs. Drain Current
100
65
R
G
I
D
I
- Ohms
D
- Amperes
75
3
= 200A, 100A
T
120
J
= 125ºC
85
t
R
V
3.5
T
f
DS
G
IXTK550N055T2
IXTX550N055T2
J
= 1Ω, V
= 25ºC
= 27.5V
140
95
4
GS
105
t
= 10V
160
d(off)
4.5
- - - -
115
180
125
5
500
400
300
200
100
0
150
140
130
120
110
100
90
80
200