IXTK550N055T2 IXYS, IXTK550N055T2 Datasheet - Page 4

• Manufacturer Part Number: IXTK550N055T2
• Description: MOSFET N-CH 55V 550A TO-264
• Manufacturer: IXYS
• Series: TrenchT2™ GigaMOS™r
• Type: TrenchT2 GigaMOSr

Specifications of IXTK550N055T2

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 1.6 mOhm @ 100A, 10V
• Drain To Source Voltage (vdss): 55V
• Current - Continuous Drain (id) @ 25° C: 550A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 595nC @ 10V
• Input Capacitance (ciss) @ Vds: 40000pF @ 25V
• Power - Max: 1250W
• Mounting Type: Through Hole
• Package / Case: TO-264
• Product: MOSFET Gate Drivers
• Rise Time: 40 ns
• Fall Time: 230 ns
• Supply Current: 200 A
• Maximum Power Dissipation: 1250 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: Through Hole
• Maximum Turn-off Delay Time: 90 ns
• Maximum Turn-on Delay Time: 45 ns
• Minimum Operating Temperature: - 55 C
• Number Of Drivers: Single
• Number Of Outputs: 1
• Output Current: 550 A
• Output Voltage: 55 V
• Vdss, Max, (v): 55
• Id(cont), Tc=25°c, (a): 550
• Rds(on), Max, Tj=25°c, (?): 0.0016
• Ciss, Typ, (pf): 40000
• Qg, Typ, (nc): 595
• Trr, Typ, (ns): 100
• Pd, (w): 1250
• Rthjc, Max, (k/w): 0.12
• Package Style: TO-264
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
100.0
10.0
300
250
200
150
100
350
300
250
200
150
100
1.0
0.1
50
50
0
0
2.5
0.2
0
f
= 1 MHz
0.3
5
3.0
0.4
Fig. 9. Forward Voltage Drop of
10
Fig. 7. Input Admittance
3.5
0.5
Fig. 11. Capacitance
T
15
Intrinsic Diode
J
= 150ºC
V
V
0.6
V
SD
GS
DS
4.0
- Volts
20
- Volts
- Volts
0.7
T
J
= 150ºC
25
- 40ºC
C oss
C rss
C iss
4.5
0.8
25ºC
T
J
30
= 25ºC
0.9
5.0
35
1.0
5.5
1.1
40
10,000
1,000
300
250
200
150
100
100
50
10
10
0
9
8
7
6
5
4
3
2
1
0
1
0
0
0
V
I
I
T
T
Single Pulse
D
G
DS
J
C
= 275A
= 10mA
= 175ºC
= 25ºC
= 27.5V
Fig. 12. Forward-Bias Safe Operating Area
100
50
R
DS(on)
Fig. 8. Transconductance
100
200
Fig. 10. Gate Charge
1
Limit
External Lead Limit
Q
G
I
- NanoCoulombs
D
V
- Amperes
DS
150
300
- Volts
IXTK550N055T2
T
IXTX550N055T2
J
= - 40ºC
25ºC
150ºC
200
400
10
500
250
DC
25µs
100µs
1ms
10ms
100ms
600
300
100