IXTK550N055T2 IXYS, IXTK550N055T2 Datasheet - Page 2

MOSFET N-CH 55V 550A TO-264

IXTK550N055T2

Manufacturer Part Number
IXTK550N055T2
Description
MOSFET N-CH 55V 550A TO-264
Manufacturer
IXYS
Series
TrenchT2™ GigaMOS™r
Type
TrenchT2 GigaMOSr
Datasheet

Specifications of IXTK550N055T2

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
1.6 mOhm @ 100A, 10V
Drain To Source Voltage (vdss)
55V
Current - Continuous Drain (id) @ 25° C
550A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
595nC @ 10V
Input Capacitance (ciss) @ Vds
40000pF @ 25V
Power - Max
1250W
Mounting Type
Through Hole
Package / Case
TO-264
Product
MOSFET Gate Drivers
Rise Time
40 ns
Fall Time
230 ns
Supply Current
200 A
Maximum Power Dissipation
1250 W
Maximum Operating Temperature
+ 175 C
Mounting Style
Through Hole
Maximum Turn-off Delay Time
90 ns
Maximum Turn-on Delay Time
45 ns
Minimum Operating Temperature
- 55 C
Number Of Drivers
Single
Number Of Outputs
1
Output Current
550 A
Output Voltage
55 V
Vdss, Max, (v)
55
Id(cont), Tc=25°c, (a)
550
Rds(on), Max, Tj=25°c, (?)
0.0016
Ciss, Typ, (pf)
40000
Qg, Typ, (nc)
595
Trr, Typ, (ns)
100
Pd, (w)
1250
Rthjc, Max, (k/w)
0.12
Package Style
TO-264
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Symbol
(T
g
C
C
C
R
t
t
t
t
Q
Q
Q
R
R
Source-Drain Diode
Symbol
(T
I
I
V
t
I
Q
Notes: 1. Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%.
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS MOSFETs and IGBTs are covered
by one or more of the following U.S. patents: 4,850,072
S
SM
RM
d(on)
r
d(off)
f
rr
fs
SD
iss
oss
rss
GI
thJC
thCS
g(on)
gs
gd
RM
J
J
The product presented herein is under development. The Technical Specifications offered are derived
from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a
"considered reflection" of the anticipated result. IXYS reserves the right to change limits, test
conditions, and dimensions without notice.
= 25°C, Unless Otherwise Specified)
= 25°C, Unless Otherwise Specified)
2. Includes lead resistance.
Gate Input Resistance
V
V
Resistive Switching Times
V
R
V
V
Repetitive, Pulse Width Limited by T
I
I
-di/dt = 100A/μs
V
Test Conditions
Test Conditions
F
F
DS
GS
GS
GS
GS
R
G
= 100A, V
= 100A, V
= 27.5V
= 10V, I
= 0V, V
= 10V, V
= 1Ω (External)
= 10V, V
= 0V
ADVANCE TECHNICAL INFORMATION
DS
D
GS
GS
DS
DS
= 60A, Note 1
= 25V, f = 1MHz
= 0V, Note 1
= 0V
= 0.5 • V
= 0.5 • V
4,835,592
4,881,106
DSS
DSS
4,931,844
5,017,508
5,034,796
, I
, I
D
D
= 200A
= 0.5 • I
5,049,961
5,063,307
5,187,117
JM
DSS
5,237,481
5,381,025
5,486,715
Min.
90
Characteristic Values
Characteristic Values
Min.
6,162,665
6,259,123 B1
6,306,728 B1
4970
1020
Typ.
1.36
0.15
150
230
595
150
163
Typ.
250
40
45
40
90
100
5
0.12 °C/W
Max.
1700
6,404,065 B1
6,534,343
6,583,505
Max.
550
1.2
°C/W
nC
nC
nC
nC
nF
pF
pF
ns
ns
ns
ns
ns
Ω
S
A
A
V
A
6,683,344
6,710,405 B2 6,759,692
6,710,463
TO-264 (IXTK) Outline
PLUS 247
6,727,585
6,771,478 B2 7,071,537
Dim.
Dim.
A
A1
A2
b
b1
b2
c
D
E
e
J
K
L
L1
P
Q
Q1
R
R1
S
T
A
A
A
b
b
b
C
D
E
e
L
L1
Q
R
1
2
1
2
Terminals: 1 - Gate
25.91
19.81
20.32
20.80
15.75
19.81
TM
IXTK550N055T2
Min.
4.82
2.54
2.00
1.12
2.39
2.90
0.53
0.00
0.00
2.29
3.17
6.07
8.38
3.81
1.78
6.04
1.57
IXTX550N055T2
4.83
2.29
1.91
1.14
1.91
2.92
0.61
3.81
5.59
4.32
Min.
Millimeter
5.46 BSC
Millimeter
5.45 BSC
(IXTX) Outline
7,005,734 B2
7,063,975 B2
26.16
19.96
20.83
2 - Drain (Collector)
3 - Source (Emitter)
4 - Drain (Collector)
Max.
21.34
16.13
20.32
5.13
2.89
2.10
1.42
2.69
3.09
0.83
0.25
0.25
2.59
3.66
6.27
8.69
4.32
2.29
6.30
1.83
Max.
5.21
2.54
2.16
1.40
2.13
3.12
0.80
4.32
6.20
4.83
1.020
Min.
.190
.100
.079
.044
.094
.114
.021
.780
.000
.000
.800
.090
.125
.239
.330
.150
.070
.238
.062
.190
.090
.075
.045
.075
.115
.024
.819
.620
.780
.150
.220 0.244
.170
Min.
.215 BSC
.215 BSC
Inches
Inches
7,157,338B2
Max.
1.030
Max.
.202
.114
.083
.056
.106
.122
.033
.786
.010
.010
.820
.102
.144
.247
.342
.170
.090
.248
.072
.205
.100
.085
.055
.084
.123
.031
.840
.635
.800
.170
.190

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