IXTH10N100D IXYS, IXTH10N100D Datasheet - Page 5

• Manufacturer Part Number: IXTH10N100D
• Description: MOSFET N-CH 1000V 10A TO-247
• Manufacturer: IXYS

Specifications of IXTH10N100D

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Depletion Mode
• Rds On (max) @ Id, Vgs: 1.4 Ohm @ 10A, 10V
• Drain To Source Voltage (vdss): 1000V (1kV)
• Current - Continuous Drain (id) @ 25° C: 10A
• Vgs(th) (max) @ Id: 3.5V @ 250µA
• Gate Charge (qg) @ Vgs: 130nC @ 10V
• Input Capacitance (ciss) @ Vds: 2500pF @ 25V
• Power - Max: 400W
• Mounting Type: Through Hole
• Package / Case: TO-247
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 1.4 Ohms
• Drain-source Breakdown Voltage: 1000 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 10 A
• Power Dissipation: 400 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Vds, Max, (v): 1000
• Id(on), Min, (a): 10
• Rds(on), Max, (?): 1.40
• Vgs(off), Max, (v): -3.5
• Ciss, Typ, (pf): 2500
• Crss, Typ, (pf): 100
• Qg, Typ, (nc): 0.31
• Pd, (w): 400
• Rthjc, Max, (ºc/w): -
• Package Style: TO-247
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

© 2009 IXYS CORPORATION, All Rights Reserved
100.0
10.0
1.00
0.10
0.01
1.0
0.1
0.0001
10
R
Fig. 13. Forward-Bias Safe Operating Area
DS(on)
Limit
100
@ T
V
0.001
DS
C
= 25ºC
- Volts
DC
Fig. 15. Maximum Transient Thermal Impedance
1,000
1ms
10ms
100ms
25µs
100µs
T
T
Single Pulse
J
C
= 150ºC
= 25ºC
0.01
Pulse Width - Seconds
10,000
100.0
10.0
1.0
0.1
10
R
Fig. 14. Forward-Bias Safe Operating Area
DS(on)
0.1
Limit
100
@ T
V
DS
C
= 75ºC
- Volts
1
DC
IXTH10N100D
1,000
IXTT10N100D
25µs
100µs
10ms
1ms
100ms
IXYS REF: T_10N100D(7N)3-31-09-B
T
T
Single Pulse
J
C
= 150ºC
= 75ºC
10,000
10