IXTH10N100D IXYS, IXTH10N100D Datasheet - Page 4

• Manufacturer Part Number: IXTH10N100D
• Description: MOSFET N-CH 1000V 10A TO-247
• Manufacturer: IXYS

Specifications of IXTH10N100D

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Depletion Mode
• Rds On (max) @ Id, Vgs: 1.4 Ohm @ 10A, 10V
• Drain To Source Voltage (vdss): 1000V (1kV)
• Current - Continuous Drain (id) @ 25° C: 10A
• Vgs(th) (max) @ Id: 3.5V @ 250µA
• Gate Charge (qg) @ Vgs: 130nC @ 10V
• Input Capacitance (ciss) @ Vds: 2500pF @ 25V
• Power - Max: 400W
• Mounting Type: Through Hole
• Package / Case: TO-247
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 1.4 Ohms
• Drain-source Breakdown Voltage: 1000 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 10 A
• Power Dissipation: 400 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Vds, Max, (v): 1000
• Id(on), Min, (a): 10
• Rds(on), Max, (?): 1.40
• Vgs(off), Max, (v): -3.5
• Ciss, Typ, (pf): 2500
• Crss, Typ, (pf): 100
• Qg, Typ, (nc): 0.31
• Pd, (w): 400
• Rthjc, Max, (ºc/w): -
• Package Style: TO-247
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
30
25
20
15
10
10
-2
-4
-6
10
5
0
8
6
4
2
0
9
8
7
6
5
4
3
2
1
0
0.3
-2.0
0
V
V
I
I
0.4
GS
D
G
DS
-1.5
= 5A
= 10mA
= -10V
20
= 500V
Fig. 9. Forward Voltage Drop of
0.5
-1.0
0.6
Fig. 7. Input Admittance
40
Fig. 11. Gate Charge
-0.5
T
Intrinsic Diode
Q
T
J
0.7
J
G
= 125ºC
= 125ºC
V
V
- NanoCoulombs
- 40ºC
SD
GS
60
25ºC
0.0
0.8
- Volts
- Volts
0.9
0.5
80
1.0
1.0
100
1.1
T
1.5
J
= 25ºC
1.2
120
2.0
1.3
140
2.5
1.4
10,000
1,000
100
1.5
1.4
1.3
1.2
1.1
1.0
0.9
0.8
0.7
10
9
8
7
6
5
4
3
2
1
0
-50
0
0
T
J
Fig. 10. Breakdown & Threshold Voltages
f
= - 40ºC
= 1 MHz
1
125ºC
-25
25ºC
5
2
vs. Junction Temperature
Fig. 8. Transconductance
10
0
T
Fig. 12. Capacitance
J
3
- Degrees Centigrade
I
25
15
D
4
- Amperes
V
DS
50
20
5
- Volts
C iss
C oss
C rss
V
BV
GS(off)
6
DSS
75
25
IXTH10N100D
IXTT10N100D
@ V
@ V
7
100
GS
DS
30
= 25V
= -10V
8
125
35
9
150
10
40