IXTH10N100D IXYS, IXTH10N100D Datasheet - Page 2

• Manufacturer Part Number: IXTH10N100D
• Description: MOSFET N-CH 1000V 10A TO-247
• Manufacturer: IXYS

Specifications of IXTH10N100D

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Depletion Mode
• Rds On (max) @ Id, Vgs: 1.4 Ohm @ 10A, 10V
• Drain To Source Voltage (vdss): 1000V (1kV)
• Current - Continuous Drain (id) @ 25° C: 10A
• Vgs(th) (max) @ Id: 3.5V @ 250µA
• Gate Charge (qg) @ Vgs: 130nC @ 10V
• Input Capacitance (ciss) @ Vds: 2500pF @ 25V
• Power - Max: 400W
• Mounting Type: Through Hole
• Package / Case: TO-247
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 1.4 Ohms
• Drain-source Breakdown Voltage: 1000 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 10 A
• Power Dissipation: 400 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Vds, Max, (v): 1000
• Id(on), Min, (a): 10
• Rds(on), Max, (?): 1.40
• Vgs(off), Max, (v): -3.5
• Ciss, Typ, (pf): 2500
• Crss, Typ, (pf): 100
• Qg, Typ, (nc): 0.31
• Pd, (w): 400
• Rthjc, Max, (ºc/w): -
• Package Style: TO-247
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Symbol
(T
g
C
C
C
t
t
t
t
Q
Q
Q
R
R
Source-Drain Diode
Symbol
(T
V
t
Note 1: Pulse Test, t ≤ 300μs; Duty Cycle, d ≤ 2%.
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS MOSFETs and IGBTs are covered
by one or more of the following U.S. patents: 4,850,072
d(on)
r
d(off)
f
rr
fs
SD
iss
oss
rss
thJC
thCS
g(on)
gs
gd
The product presented herein is under development. The Technical Specifications offered are derived
from data gathered during objective characterizations of preliminary engineering lots; but also may yet
contain some information supplied during a pre-production design evaluation. IXYS reserves the right
to change limits, test conditions, and dimensions without notice.
J
J
= 25°C, Unless Otherwise Specified)
= 25°C, Unless Otherwise Specified)
V
V
Resistive Switching Times
V
R
V
(TO-247)
I
I
V
Test Conditions
Test Conditions
F
F
DS
GS
GS
GS
R
G
= I
= 10A, -di/dt = 100A/μs
= 100V, V
PRELIMINARY TECHNICAL INFORMATION
= 30V, I
= -10V, V
= -10V, V
= 4.7Ω (External)
= 10V, V
D25
, V
GS
D
= -10V, Note 1
DS
GS
= 0.5 • I
DS
DS
= 0.5 • V
= -10V
4,835,592
4,881,106
= 25V, f = 1MHz
= 0.5 • V
D25
, Note 1
DSX
4,931,844
5,017,508
5,034,796
DSX
, I
, I
D
D
= 0.5 • I
= 0.5 • I
5,049,961
5,063,307
5,187,117
D25
D25
5,237,481
5,381,025
5,486,715
Min.
3.0
Characteristic Values
Characteristic Values
Min.
6,162,665
6,259,123 B1
6,306,728 B1
2500
300
100
110
130
0.21
Typ.
850
Typ.
5.4
35
85
75
27
58
1.1
0.31 °C/W
6,404,065 B1
6,534,343
6,583,505
Max.
Max.
1.5
°C/W
nC
nC
nC
pF
pF
pF
ns
ns
ns
ns
ns
S
V
6,683,344
6,710,405 B2 6,759,692
6,710,463
TO-268 (IXTT) Outline
TO-247 (IXTH) Outline
6,727,585
6,771,478 B2 7,071,537
Terminals: 1 - Gate
Dim.
A
A
A
b
b
b
C
D
E
e
L
L1
∅P
Q
R
S
1
2
1
2
20.80
15.75
19.81
1.65
2.87
5.20
3.55
5.89
4.32
6.15 BSC
Min.
4.7
2.2
2.2
1.0
Millimeter
1
.4
3 - Source
7,005,734 B2
7,063,975 B2
IXTH10N100D
IXTT10N100D
2
21.46
16.26
20.32
Max.
2.54
2.13
3.12
5.72
4.50
3.65
6.40
5.49
3
5.3
2.6
1.4
.8
e
0.205 0.225
0.232 0.252
∅ P
.185
.087
.059
.040
.065
.113
.016
.819
.610
.780
.140
.170
Min.
2 - Drain
Tab - Drain
242 BSC
Inches
7,157,338B2
Max.
.209
.102
.098
.055
.084
.123
.031
.845
.640
.800
.177
.144
.216