STP21NM60ND STMicroelectronics, STP21NM60ND Datasheet - Page 4

• Manufacturer Part Number: STP21NM60ND
• Description: MOSFET N-CH 600V 17A TO-220
• Manufacturer: STMicroelectronics
• Series: FDmesh™r

Specifications of STP21NM60ND

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 220 mOhm @ 8.5A, 10V
• Drain To Source Voltage (vdss): 600V
• Current - Continuous Drain (id) @ 25° C: 17A
• Vgs(th) (max) @ Id: 5V @ 250µA
• Gate Charge (qg) @ Vgs: 60nC @ 10V
• Input Capacitance (ciss) @ Vds: 1800pF @ 50V
• Power - Max: 140W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Transistor Polarity: N Channel
• Continuous Drain Current Id: 17A
• Drain Source Voltage Vds: 600V
• On Resistance Rds(on): 0.17ohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 4V
• Configuration: Single
• Resistance Drain-source Rds (on): 0.22 Ohm @ 10 V
• Drain-source Breakdown Voltage: 600 V
• Gate-source Breakdown Voltage: +/- 25 V
• Continuous Drain Current: 17 A
• Power Dissipation: 140 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Fall Time: 48 ns
• Rise Time: 16 ns
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-8444-5

Electrical characteristics
2
4/18
Electrical characteristics
(T
Table 5.
1. Characteristic value at turn off on inductive load
Table 6.
1. Pulsed: pulse duration=300 µs, duty cycle 1.5%
2. C
C
V
Symbol
Symbol
R
dv/dt
CASE
V
oss eq.
(BR)DSS
g
t
t
C
I
I
increases from 0 to 80% V
DS(on)
C
C
GS(th)
d(on)
d(off)
Q
Q
DSS
GSS
fs
Q
R
oss
t
oss eq
t
rss
iss
gs
gd
r
f
g
g
(1)
(1)
=25°C unless otherwise specified)
(2)
. is defined as a constant equivalent capacitance giving the same charging time as C
Forward transconductance
Input capacitance
Output capacitance
Reverse transfer
capacitance
Equivalent output
capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Total gate charge
Gate-source charge
Gate-drain charge
Gate input resistance
Drain-source
breakdown voltage
Drain source voltage slope
Zero gate voltage
drain current (V
Gate-body leakage
current (V
Gate threshold voltage
Static drain-source on
resistance
On/off states
Dynamic
STP/F21NM60ND - STB21NM60ND - STI21NM60ND - STW21NM60ND
Parameter
Parameter
DS
= 0)
DSS
GS
= 0)
V
V
V
V
V
R
(see Figure 23),
(see Figure 18)
V
V
(see Figure 19)
f=1 MHz Gate DC Bias=0
Test signal level=20 mV
Open drain
I
V
V
V
V
V
V
V
D
GS
GS
GS
DS
DS
DD
DD
DD
GS
DS
DS
GS
DS
GS
G
= 1 mA, V
= 4.7 Ω, V
= 480 V, I
= 10 V
= 15 V
= 50 V, f = 1 MHz,
= 0
= 0, V
=300 V, I
= 480 V, I
= 10 V,
= Max rating
= Max rating @125 °C
= ± 20 V
= V
= 10 V, I
Test conditions
Test conditions
GS
DS
, I
,
I
GS
D
D
D
D
D
= 0 to 480 V
GS
D
= 250 µA
= 8 A
= 17 A,
= 8.5 A
= 8.5 A
= 0
= 17 A,
= 10 V
Min.
Min.
600
3
1800
Value
Typ.
0.170 0.220
300
Typ.
12
90
18
16
70
48
60
10
30
8
3
48
4
oss
Max.
Max.
100
100
when V
1
5
DS
Unit
V/ns
Unit
nC
nC
nC
pF
pF
pF
pF
µA
µA
nA
ns
ns
ns
ns
S
Ω
V
V
Ω