STP21NM60ND STMicroelectronics, STP21NM60ND Datasheet - Page 7
STP21NM60ND
Manufacturer Part Number
STP21NM60ND
Description
MOSFET N-CH 600V 17A TO-220
Manufacturer
STMicroelectronics
Series
FDmesh™r
Datasheet
1.STW21NM60ND.pdf
(18 pages)
Specifications of STP21NM60ND
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
220 mOhm @ 8.5A, 10V
Drain To Source Voltage (vdss)
600V
Current - Continuous Drain (id) @ 25° C
17A
Vgs(th) (max) @ Id
5V @ 250µA
Gate Charge (qg) @ Vgs
60nC @ 10V
Input Capacitance (ciss) @ Vds
1800pF @ 50V
Power - Max
140W
Mounting Type
Through Hole
Package / Case
TO-220-3 (Straight Leads)
Transistor Polarity
N Channel
Continuous Drain Current Id
17A
Drain Source Voltage Vds
600V
On Resistance Rds(on)
0.17ohm
Rds(on) Test Voltage Vgs
10V
Threshold Voltage Vgs Typ
4V
Configuration
Single
Resistance Drain-source Rds (on)
0.22 Ohm @ 10 V
Drain-source Breakdown Voltage
600 V
Gate-source Breakdown Voltage
+/- 25 V
Continuous Drain Current
17 A
Power Dissipation
140 W
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Minimum Operating Temperature
- 55 C
Fall Time
48 ns
Rise Time
16 ns
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
497-8444-5
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
STP21NM60ND
Manufacturer:
STMicroelectronics
Quantity:
1 790
Company:
Part Number:
STP21NM60ND
Manufacturer:
ST
Quantity:
20 000
STP/F21NM60ND - STB21NM60ND - STI21NM60ND - STW21NM60ND
Figure 8.
Figure 10. Transconductance
Figure 12. Gate charge vs gate-source voltage Figure 13. Capacitance variations
Output characteristics
Figure 9.
Figure 11. Static drain-source on resistance
Transfer characteristics
Electrical characteristics
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