STW11NM80 STMicroelectronics, STW11NM80 Datasheet - Page 3

• Manufacturer Part Number: STW11NM80
• Description: MOSFET N-CH 800V 11A TO-247
• Manufacturer: STMicroelectronics
• Series: MDmesh™r

Specifications of STW11NM80

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 400 mOhm @ 5.5A, 10V
• Drain To Source Voltage (vdss): 800V
• Current - Continuous Drain (id) @ 25° C: 11A
• Vgs(th) (max) @ Id: 5V @ 250µA
• Gate Charge (qg) @ Vgs: 43.6nC @ 10V
• Input Capacitance (ciss) @ Vds: 1630pF @ 25V
• Power - Max: 150W
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.4 Ohm @ 10 V
• Forward Transconductance Gfs (max / Min): 8 S
• Drain-source Breakdown Voltage: 800 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 11 A
• Power Dissipation: 150000 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 65 C
• Continuous Drain Current Id: 5.5A
• Drain Source Voltage Vds: 800V
• On Resistance Rds(on): 350mohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 4V
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-4420-5

STB/F/P/W11NM80
1
Electrical ratings
Table 2.
1. Limited only by the maximum temperature allowed
2. Pulse width limited by safe operating area
Table 3.
Table 4.
Symbol
Symbol
R
Symbol
I
P
V
DM
R
V
thj-case
V
T
E
T
I
I
TOT
I
ISO
GS
thj-a
T
DS
stg
D
D
AS
AS
J
(2)
l
Drain-source voltage (V
Gate-source voltage
Drain current (continuous) at T
Drain current (continuous) at T
Drain current (pulsed)
Total dissipation at T
Derating factor
Insulation withstand voltage (DC)
Operating junction temperature
Storage temperature
Absolute maximum ratings
Thermal data
Avalanche characteristics
Thermal resistance junction-case max
Thermal resistance junction-ambient max
Maximum lead temperature for soldering
purpose
Avalanche current, repetitive or not-
repetitive (pulse width limited by Tj max)
Single pulse avalanche energy
(starting Tj=25 °C, I
Parameter
Parameter
Parameter
Doc ID 9241 Rev 10
D
C
=I
= 25 °C
GS
AR
, V
= 0)
DD
C
C
=50 V)
=100 °C
= 25 °C
TO-220, D²PAK,
TO-220, D²PAK,
TO-247
TO-247
150
0.83
1.2
11
44
8
-65 to 150
Value
Value
Value
800
±30
62.5
300
400
2.5
Electrical ratings
TO-220FP
TO-220FP
11
44
2500
0.28
8
3.6
35
(1)
(1)
(1)
°C/W
°C/W
W/°C
Unit
Unit
Unit
°C
mJ
°C
W
V
V
A
A
A
V
A
3/17