STW11NM80 STMicroelectronics, STW11NM80 Datasheet

MOSFET N-CH 800V 11A TO-247

STW11NM80

Manufacturer Part Number
STW11NM80
Description
MOSFET N-CH 800V 11A TO-247
Manufacturer
STMicroelectronics
Series
MDmesh™r
Datasheet

Specifications of STW11NM80

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
400 mOhm @ 5.5A, 10V
Drain To Source Voltage (vdss)
800V
Current - Continuous Drain (id) @ 25° C
11A
Vgs(th) (max) @ Id
5V @ 250µA
Gate Charge (qg) @ Vgs
43.6nC @ 10V
Input Capacitance (ciss) @ Vds
1630pF @ 25V
Power - Max
150W
Mounting Type
Through Hole
Package / Case
TO-247-3
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.4 Ohm @ 10 V
Forward Transconductance Gfs (max / Min)
8 S
Drain-source Breakdown Voltage
800 V
Gate-source Breakdown Voltage
+/- 30 V
Continuous Drain Current
11 A
Power Dissipation
150000 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Minimum Operating Temperature
- 65 C
Continuous Drain Current Id
5.5A
Drain Source Voltage Vds
800V
On Resistance Rds(on)
350mohm
Rds(on) Test Voltage Vgs
10V
Threshold Voltage Vgs Typ
4V
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
497-4420-5

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
STW11NM80
Manufacturer:
ST
Quantity:
12 000
Part Number:
STW11NM80
Manufacturer:
ST
0
Part Number:
STW11NM80
Manufacturer:
ST
Quantity:
150
Company:
Part Number:
STW11NM80
Quantity:
9 000
Part Number:
STW11NM80 W11NM80
Manufacturer:
ST
0
Part Number:
STW11NM80,W11NM80,
Manufacturer:
ST
0
Part Number:
STW11NM80/STW11NB80
Manufacturer:
ST
0
Part Number:
STW11NM80��STW14NM50N
Manufacturer:
ST
0
Features
Application
Description
The MDmesh™ associates the multiple drain
process with the company’s PowerMesh™
horizontal layout assuring an outstanding low on-
resistance. The adoption of the company’s
proprietary strip technique yields overall dynamic
performance that is significantly better than that of
similar competition’s products.
Table 1.
March 2010
STW11NM80
STB11NM80
STP11NM80
STF11NM80
Low input capacitance and gate charge
Low gate input resistance
Best R
Switching applications
Type
STW11NM80
Order codes
STB11NM80
STF11NM80
STP11NM80
DS(on)
N-channel 800 V, 0.35 Ω, 11 A MDmesh™ Power MOSFET
Device summary
800 V
V
*Qg in the industry
DSS
< 0.40 Ω
R
DS(on)
max
R
DS(on)
14Ω*nC
W11NM80
B11NM80
P11NM80
F11NM80
Marking
*Q
g
Doc ID 9241 Rev 10
11 A
I
D
TO-220, TO-220FP, D
STP11NM80, STW11NM80
STB11NM80, STF11NM80
Figure 1.
TO-220FP
Package
TO-220
TO-247
TO-247
D²PAK
Internal schematic diagram
TO-220
1
2
1
3
2
3
2
PAK, TO-247
Tape and reel
Packaging
TO-220FP
D²PAK
Tube
1
www.st.com
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1
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3
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Related parts for STW11NM80

STW11NM80 Summary of contents

Page 1

... The adoption of the company’s proprietary strip technique yields overall dynamic performance that is significantly better than that of similar competition’s products. Table 1. Device summary Order codes STB11NM80 STF11NM80 STP11NM80 STW11NM80 March 2010 STB11NM80, STF11NM80 STP11NM80, STW11NM80 TO-220, TO-220FP DS(on TO-247 14Ω* Figure 1. Marking ...

Page 2

Contents Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ...

Page 3

STB/F/P/W11NM80 1 Electrical ratings Table 2. Absolute maximum ratings Symbol V Drain-source voltage ( Gate-source voltage GS I Drain current (continuous Drain current (continuous (2) I Drain current (pulsed ...

Page 4

Electrical characteristics 2 Electrical characteristics ( °C unless otherwise specified) CASE Table 5. On/off states Symbol Drain-source breakdown V (BR)DSS voltage (1) dv/dt Drain source voltage slope Zero gate voltage drain I DSS current (V Gate body leakage ...

Page 5

STB/F/P/W11NM80 Table 7. Source drain diode Symbol I Source-drain current SD (1) I Source-drain current (pulsed) SDM (2) V Forward on voltage SD t Reverse recovery time rr Q Reverse recovery charge rr I Reverse recovery current RRM t Reverse ...

Page 6

Electrical characteristics 2.1 Electrical characteristics (curves) Figure 2. Safe operating area for TO-220, D²PAK, TO-247 Tj=150°C Tc=25°C Sinlge pulse 0.1 0 Figure 4. Safe operating area for TO-220FP ...

Page 7

STB/F/P/W11NM80 Figure 8. Transfer characteristics Figure 10. Gate charge vs gate-source voltage Figure 11. Capacitance variations Figure 12. Normalized gate threshold voltage vs temperature Figure 9. Transconductance Figure 13. Static drain-source on resistance Doc ID 9241 Rev 10 Electrical characteristics ...

Page 8

Electrical characteristics Figure 14. Source-drain diode forward characteristics Figure 16. Normalized B VDSS 8/17 Figure 15. Normalized on resistance vs vs temperature Doc ID 9241 Rev 10 STB/F/P/W11NM80 temperature ...

Page 9

STB/F/P/W11NM80 3 Test circuits Figure 17. Switching times test circuit for resistive load D.U. Figure 19. Test circuit for inductive load switching and diode recovery times ...

Page 10

Package mechanical data 4 Package mechanical data In order to meet environmental requirements, ST offers these devices in different grades of ® ECOPACK packages, depending on their level of environmental compliance. ECOPACK specifications, grade definitions and product status are available ...

Page 11

STB/F/P/W11NM80 Table 8. TO-220FP mechanical data Dim Dia Figure 23. TO-220FP drawing A Min. 4.4 2.5 2.5 0.45 0.75 1.15 1.15 4.95 2.4 10 ...

Page 12

Package mechanical data 12/17 TO-220 type A mechanical data Dim Min A 4.40 b 0.61 b1 1.14 c 0.48 D 15. 2.40 e1 4.95 F 1.23 H1 6. 3.50 L20 L30 ...

Page 13

STB/F/P/W11NM80 Dim øP øR S TO-247 Mechanical data mm. Min. Typ 4.85 2.20 1.0 2.0 3.0 0.40 19.85 15.45 5.45 14.20 3.70 18.50 3.55 4.50 5.50 Doc ID ...

Page 14

Package mechanical data Dim 14/17 D²PAK (TO-263) mechanical data mm Min Typ Max 4.40 4.60 0.03 0.23 0.70 0.93 1.14 1.70 ...

Page 15

STB/F/P/W11NM80 5 Packaging mechanical data 2 D PAK FOOTPRINT TAPE MECHANICAL DATA mm DIM. MIN. MAX. A0 10.5 10.7 B0 15.7 15.9 D 1.5 D1 1.59 1.61 E 1.65 1.85 F 11.4 11.6 K0 4.8 P0 3.9 P1 11.9 12.1 ...

Page 16

Revision history 6 Revision history Table 9. Document revision history Date 30-Sep-2004 26-Nov-2005 07-Apr-2006 15-May-2006 20-Jul-2006 20-Dec-2007 24-Mar-2010 16/17 Revision 4 Preliminary version 5 Complete version Figure 8 6 Modified value on 7 New dv/dt value on 8 The document ...

Page 17

... STB/F/P/W11NM80 Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST’s terms and conditions of sale. ...

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