IXKC19N60C5 IXYS, IXKC19N60C5 Datasheet - Page 4
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IXKC19N60C5
Manufacturer Part Number
IXKC19N60C5
Description
MOSFET N-CH 600V 19A ISOPLUS220
Manufacturer
IXYS
Series
CoolMOS™r
Datasheet
1.IXKC19N60C5.pdf
(4 pages)
Specifications of IXKC19N60C5
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
125 mOhm @ 16A, 10V
Drain To Source Voltage (vdss)
600V
Current - Continuous Drain (id) @ 25° C
19A
Vgs(th) (max) @ Id
3.5V @ 1.1mA
Gate Charge (qg) @ Vgs
70nC @ 10V
Input Capacitance (ciss) @ Vds
2500pF @ 100V
Mounting Type
Through Hole
Package / Case
ISOPLUS220™
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.125 Ohms
Drain-source Breakdown Voltage
600 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
19 A
Power Dissipation
132 W
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Vdss, Max, (v)
600
Id(cont), Tc=25°c, (a)
19
Rds(on), Max, Tj=25°c, (?)
0.125
Ciss, Typ, (pf)
2500
Qg, Typ, (nc)
53
Trr, Max, (ns)
-
Trr, Typ, (ns)
430
Pd, (w)
132
Rthjc, Max, (k/w)
0.95
Visol, Rms, (v)
2500
Package Style
ISOPLUS220
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Power - Max
-
Lead Free Status / Rohs Status
Details
IXYS reserves the right to change limits, test conditions and dimensions.
© 2009 IXYS All rights reserved
800
600
400
200
10
0.5
0.4
0.3
0.2
0.1
10
10
10
0
0
-1
2
1
0
20
0
Fig. 7 Forward characteristic
Fig. 10 Avalanche energy
Fig. 4 Typ. drain-source on-state resistance
0
T
I
D
JV
= 11 A
= 150°C
T
10
J
of reverse diode
=
60
0.5
150 °C
V
DS
=
20
5 V
V
I
T
D
100
SD
j
1
[°C]
[A]
25 °C
[V]
30
5.5 V
140
1.5
25 °C, 98%
40
150 °C, 98%
6 V 6.5 V
20 V
7 V
50
180
2
Advanced Technical Information
0.4
0.3
0.2
0.1
700
660
620
580
540
0
10
-60
9
8
7
6
5
4
3
2
1
0
-60
0
Fig. 5 Drain-source on-state resistance
Fig. 8
Fig. 11 Drain-source breakdown voltage
I
D
= 0.25 mA
I
V
D
I
-20
D
GS
-20
= 16 A pulsed
10
= 16 A
= 10 V
Typ. gate charge
20
20
98 %
20
V
Q
DS
T
T
gate
60
j
= 120 V
60
j
[°C]
30
[°C]
typ
[nC]
1 2 0 V
100
100
40
140
40 0V
140
50
180
180
60
120
10
10
10
10
10
10
10
10
80
40
10
0
5
4
3
2
1
0
-1
-2
0
10
0
0
Fig. 6 Typ. transfer characteristics
Fig. 9 Typ. capacitances
0.05
0.02
-5
V
0.5
0.01
0.2
0.1
DS
f = 1 MHz
V
single pulse
GS
> 2·R
= 0 V
10
2
DS(on) max
Crss
-4
IXKC 19N60C5
50
Ciss
Coss
· I
10
4
D
V
-3
V
t
GS
100
DS
p
[s]
[V]
[V]
D = t
10
6
-2
p
/T
150
10
8
-1
25 °C
150 °C
T
J
20090209b
=
200
4 - 4
10
10
0