IXKC19N60C5 IXYS, IXKC19N60C5 Datasheet - Page 4

• Manufacturer Part Number: IXKC19N60C5
• Description: MOSFET N-CH 600V 19A ISOPLUS220
• Manufacturer: IXYS
• Series: CoolMOS™r

Specifications of IXKC19N60C5

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 125 mOhm @ 16A, 10V
• Drain To Source Voltage (vdss): 600V
• Current - Continuous Drain (id) @ 25° C: 19A
• Vgs(th) (max) @ Id: 3.5V @ 1.1mA
• Gate Charge (qg) @ Vgs: 70nC @ 10V
• Input Capacitance (ciss) @ Vds: 2500pF @ 100V
• Mounting Type: Through Hole
• Package / Case: ISOPLUS220™
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.125 Ohms
• Drain-source Breakdown Voltage: 600 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 19 A
• Power Dissipation: 132 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Vdss, Max, (v): 600
• Id(cont), Tc=25°c, (a): 19
• Rds(on), Max, Tj=25°c, (?): 0.125
• Ciss, Typ, (pf): 2500
• Qg, Typ, (nc): 53
• Trr, Max, (ns): -
• Trr, Typ, (ns): 430
• Pd, (w): 132
• Rthjc, Max, (k/w): 0.95
• Visol, Rms, (v): 2500
• Package Style: ISOPLUS220™
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Power - Max: -
• Lead Free Status / Rohs Status: Details

IXYS reserves the right to change limits, test conditions and dimensions.
© 2009 IXYS All rights reserved
800
600
400
200
10
0.5
0.4
0.3
0.2
0.1
10
10
10
0
0
-1
2
1
0
20
0
Fig. 7 Forward characteristic
Fig. 10 Avalanche energy
Fig. 4 Typ. drain-source on-state resistance
0
T
I
D
JV
= 11 A
= 150°C
T
10
J
of reverse diode
=
60
0.5
150 °C
V
DS
=
20
5 V
V
I
T
D
100
SD
j
1
[°C]
[A]
25 °C
[V]
30
5.5 V
140
1.5
25 °C, 98%
40
150 °C, 98%
6 V 6.5 V
20 V
7 V
50
180
2
Advanced Technical Information
0.4
0.3
0.2
0.1
700
660
620
580
540
0
10
-60
9
8
7
6
5
4
3
2
1
0
-60
0
Fig. 5 Drain-source on-state resistance
Fig. 8
Fig. 11 Drain-source breakdown voltage
I
D
= 0.25 mA
I
V
D
I
-20
D
GS
-20
= 16 A pulsed
10
= 16 A
= 10 V
Typ. gate charge
20
20
98 %
20
V
Q
DS
T
T
gate
60
j
= 120 V
60
j
[°C]
30
[°C]
typ
[nC]
1 2 0 V
100
100
40
140
40 0V
140
50
180
180
60
120
10
10
10
10
10
10
10
10
80
40
10
0
5
4
3
2
1
0
-1
-2
0
10
0
0
Fig. 6 Typ. transfer characteristics
Fig. 9 Typ. capacitances
0.05
0.02
-5
V
0.5
0.01
0.2
0.1
DS
f = 1 MHz
V
single pulse
GS
> 2·R
= 0 V
10
2
DS(on) max
Crss
-4
IXKC 19N60C5
50
Ciss
Coss
· I
10
4
D
V
-3
V
t
GS
100
DS
p
[s]
[V]
[V]
D = t
10
6
-2
p
/T
150
10
8
-1
25 °C
150 °C
T
J
20090209b
=
200
4 - 4
10
10
0