IXKC19N60C5 IXYS, IXKC19N60C5 Datasheet

IXKC19N60C5

Manufacturer Part Number

IXKC19N60C5

Description

MOSFET N-CH 600V 19A ISOPLUS220

Manufacturer

IXYS

Series

CoolMOS™r

Datasheet

1.IXKC19N60C5.pdf (4 pages)

Specifications of IXKC19N60C5

Fet Type

MOSFET N-Channel, Metal Oxide

Fet Feature

Standard

Rds On (max) @ Id, Vgs

125 mOhm @ 16A, 10V

Drain To Source Voltage (vdss)

600V

Current - Continuous Drain (id) @ 25° C

19A

Vgs(th) (max) @ Id

3.5V @ 1.1mA

Gate Charge (qg) @ Vgs

70nC @ 10V

Input Capacitance (ciss) @ Vds

2500pF @ 100V

Mounting Type

Through Hole

Package / Case

ISOPLUS220™

Configuration

Single

Transistor Polarity

N-Channel

Resistance Drain-source Rds (on)

0.125 Ohms

Drain-source Breakdown Voltage

600 V

Gate-source Breakdown Voltage

+/- 20 V

Continuous Drain Current

19 A

Power Dissipation

132 W

Maximum Operating Temperature

+ 150 C

Mounting Style

SMD/SMT

Minimum Operating Temperature

- 55 C

Vdss, Max, (v)

600

Id(cont), Tc=25°c, (a)

Rds(on), Max, Tj=25°c, (?)

0.125

Ciss, Typ, (pf)

2500

Qg, Typ, (nc)

Trr, Max, (ns)

Trr, Typ, (ns)

430

Pd, (w)

132

Rthjc, Max, (k/w)

0.95

Visol, Rms, (v)

2500

Package Style

ISOPLUS220

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

Power - Max

Lead Free Status / Rohs Status

Details

Current page: 1 of 4
Download datasheet (115Kb)

CoolMOS

Electrically isolated back surface

2500 V electrical isolation

N-Channel Enhancement Mode

Low R

Ultra low gate charge

IXYS reserves the right to change limits, test conditions and dimensions.

MOSFET

Symbol

dV/dt

Symbol

DSS

GSS

D25

D90

d(on)

d(off)

GS(th)

DSS

DSon

iss

oss

thJC

DSon

, high V

Conditions

single pulse

repetitive

MOSFET dV/dt ruggedness V

Conditions

f = 1 MHz

= 16 A; R

= 25°C

= 90°C

= 25°C

= 600 V; V

= 10 V; I

= V

= ± 20 V; V

= 0 V; V

= 0 to 10 V; V

= 10 V; V

™ 1)

; I

DSS

= 1.1 mA

= 3.3 Ω

= 16 A

= 100 V

MOSFET

= 400 V

Power MOSFET

= 0 V

= 11 A; T

= 400 V; I

= 25°C

= 125°C

= 12 A

= 0...480 V

Advanced Technical Information

= 25°C, unless otherwise speciﬁ ed)

min.

2.5

Characteristic Values

2500

Maximum Ratings

typ.

110

120

max.

± 20

0.95

600

708

125

100

1.2

3.5

V/ns

K/W

mΩ

µA

ISOPLUS220

Features

• Silicon chip on Direct-Copper-Bond

• Fast CoolMOS

• Enhanced total power density

Applications

• Switched mode power supplies

• Uninterruptible power supplies (UPS)

• Power factor correction (PFC)

• Welding

• Inductive heating

• PDP and LCD adapter

Advantages

• Easy assembly:

• Space savings

• High power density

• High reliability

D25

substrate

- high power dissipation

- isolated mounting surface

- 2500 V electrical isolation

- low drain to tab capacitance (< 30 pF)

generation

- high blocking capability

- lowest resistance

- avalanche rated for unclamped

- low thermal resistance

(SMPS)

no screws or isolation foils required

DSS

DS(on) max

inductive switching (UIS)

due to reduced chip thickness

E72873

CoolMOS

Inﬁ neon Technologies AG.

IXKC 19N60C5

= 0.125 Ω

™ 1)

™

is a trademark of

power MOSFET 4

600 V

19 A

isolated back

20090209b

surface

1 - 4

Related parts for IXKC19N60C5

IXKC19N60C5 Summary of contents

Page 1

... 400 3.3 Ω d(off thJC IXYS reserves the right to change limits, test conditions and dimensions. © 2009 IXYS All rights reserved Advanced Technical Information G Maximum Ratings 600 ± 708 = 25°C C 1.2 = 0...480 Characteristic Values (T = 25°C, unless otherwise speciﬁ ed) VJ min ...

Page 2

... ISOL F mounting force C Symbol Conditions R with heatsink compound thCH Weight IXYS reserves the right to change limits, test conditions and dimensions. © 2009 IXYS All rights reserved Advanced Technical Information Characteristic Values (T = 25°C, unless otherwise speciﬁ ed) VJ min. typ. max. ...

Page 3

... TM ISOPLUS220 Outline 140 120 100 120 T [°C] C Fig. 1 Power dissipation IXYS reserves the right to change limits, test conditions and dimensions. © 2009 IXYS All rights reserved Advanced Technical Information A * Note 120 T = 25°C J 105 5 4 160 [V] DS Fig. 2 Typ. output characteristics ...

Page 4

... V [V] SD Fig. 7 Forward characteristic of reverse diode 800 600 400 200 100 140 T [°C] j Fig. 10 Avalanche energy IXYS reserves the right to change limits, test conditions and dimensions. © 2009 IXYS All rights reserved Advanced Technical Information 0 0.3 0.2 typ -60 - 100 T [° ...

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