IXKC19N60C5 IXYS, IXKC19N60C5 Datasheet - Page 2
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IXKC19N60C5
Manufacturer Part Number
IXKC19N60C5
Description
MOSFET N-CH 600V 19A ISOPLUS220
Manufacturer
IXYS
Series
CoolMOS™r
Datasheet
1.IXKC19N60C5.pdf
(4 pages)
Specifications of IXKC19N60C5
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
125 mOhm @ 16A, 10V
Drain To Source Voltage (vdss)
600V
Current - Continuous Drain (id) @ 25° C
19A
Vgs(th) (max) @ Id
3.5V @ 1.1mA
Gate Charge (qg) @ Vgs
70nC @ 10V
Input Capacitance (ciss) @ Vds
2500pF @ 100V
Mounting Type
Through Hole
Package / Case
ISOPLUS220™
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.125 Ohms
Drain-source Breakdown Voltage
600 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
19 A
Power Dissipation
132 W
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Vdss, Max, (v)
600
Id(cont), Tc=25°c, (a)
19
Rds(on), Max, Tj=25°c, (?)
0.125
Ciss, Typ, (pf)
2500
Qg, Typ, (nc)
53
Trr, Max, (ns)
-
Trr, Typ, (ns)
430
Pd, (w)
132
Rthjc, Max, (k/w)
0.95
Visol, Rms, (v)
2500
Package Style
ISOPLUS220
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Power - Max
-
Lead Free Status / Rohs Status
Details
IXYS reserves the right to change limits, test conditions and dimensions.
© 2009 IXYS All rights reserved
Source-Drain Diode
Symbol
I
V
t
Q
I
Component
Symbol
T
T
V
F
Symbol
R
Weight
S
RM
rr
SD
VJ
stg
C
ISOL
RM
thCH
Conditions
V
I
I
Conditions
operating
storage
RMS leads-to-tab, 50/60 Hz, f = 1 minute
mounting force
Conditions
with heatsink compound
F
F
GS
= 16 A; V
= 16 A; -di
= 0 V
GS
F
/dt = 100 A/µs; V
= 0 V
R
(T
Advanced Technical Information
= 400 V
VJ
= 25°C, unless otherwise specifi ed)
min.
min.
Characteristic Values
Characteristic Values
11-65 / 2.4-11
Maximum Ratings
typ.
typ.
430
0.9
0.3
2.7
42
-55...+150
-55...+150
9
max.
2500
max.
1.2
16
K/W
N/lb
µC
V~
°C
°C
ns
A
V
A
g
IXKC 19N60C5
20090209b
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