IXTH75N15 IXYS, IXTH75N15 Datasheet - Page 4

• Manufacturer Part Number: IXTH75N15
• Description: MOSFET N-CH 150V 75A TO-247
• Manufacturer: IXYS

Specifications of IXTH75N15

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 23 mOhm @ 500mA, 10V
• Drain To Source Voltage (vdss): 150V
• Current - Continuous Drain (id) @ 25° C: 75A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 210nC @ 10V
• Input Capacitance (ciss) @ Vds: 5400pF @ 25V
• Power - Max: 330W
• Mounting Type: Through Hole
• Package / Case: TO-247
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.023 Ohms
• Drain-source Breakdown Voltage: 150 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 75 A
• Power Dissipation: 330 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Vdss, Max, (v): 150
• Id(cont), Tc=25°c, (a): 75
• Rds(on), Max, Tj=25°c, (?): -
• Ciss, Typ, (pf): -
• Qg, Typ, (nc): -
• Trr, Typ, (ns): -
• Pd, (w): -
• Rthjc, Max, (k/w): -
• Package Style: TO-247
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by
one or moreof the following U.S. patents:
10000
1000
100
180
160
140
120
100
200
180
160
140
120
100
80
60
40
20
80
60
40
20
0
0
3.5
0.4
0
Fig. 9. Source Current vs. Source-To-
T
J
T
4
f = 1MHz
5
= 125ºC
0.6
J
= 125ºC
Fig. 11. Capacitance
Fig. 7. Input Adm ittance
4.5
-40ºC
25ºC
10
0.8
5
Drain Voltage
V
15
V
V
G S
S D
4,835,592
4,850,072
T
D S
5.5
J
1
= 25ºC
- Volts
- Volts
20
- Volts
6
1.2
4,881,106
4,931,844
25
C oss
6.5
C iss
C rss
1.4
30
5,034,796
5,017,508
7
1.6
7.5
35
5,049,961
5,063,307
1.8
40
8
5,187,117
5,237,481
1000
100
80
70
60
50
40
30
20
10
10
0
10
1
5,486,715
9
8
7
6
5
4
3
2
1
0
5,381,025
0
1
0
R
T
T
DS(on)
J
C
V
I
I
20
D
G
= 150
DS
= 25
Fig. 8. Transconductance
30
6,162,665
6,259,123 B1 6,404,065 B1
= 37.5A
= 10mA
= 75V
Limit
º
Fig. 10. Gate Charge
40
Fig. 12. Forw ard-Bias
º
C
Safe Operating Area
C
Q
60
10
60
6,306,728 B1 6,534,343
G
I
D
T
- nanoCoulombs
V
J
- Amperes
D S
DC
= -40ºC
80
125ºC
90
25ºC
- Volts
100
6,583,505
120
100
IXTH 75N15
IXTT 75N15
120 140
6,683,344
6,710,405B2
100µs
1ms
10ms
25µs
150
160
1000
180
180