IXTH75N15 IXYS, IXTH75N15 Datasheet
Home Discrete Semiconductor Products MOSFETs, GaNFETs - Single IXTH75N15
Manufacturer Part Number
IXTH75N15
Description
MOSFET N-CH 150V 75A TO-247
Specifications of IXTH75N15
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
23 mOhm @ 500mA, 10V
Drain To Source Voltage (vdss)
150V
Current - Continuous Drain (id) @ 25° C
75A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
210nC @ 10V
Input Capacitance (ciss) @ Vds
5400pF @ 25V
Power - Max
330W
Mounting Type
Through Hole
Package / Case
TO-247
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.023 Ohms
Drain-source Breakdown Voltage
150 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
75 A
Power Dissipation
330 W
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Minimum Operating Temperature
- 55 C
Vdss, Max, (v)
150
Id(cont), Tc=25°c, (a)
75
Rds(on), Max, Tj=25°c, (?)
-
Ciss, Typ, (pf)
-
Qg, Typ, (nc)
-
Trr, Typ, (ns)
-
Pd, (w)
-
Rthjc, Max, (k/w)
-
Package Style
TO-247
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
High Current
Power MOSFET
© 2004 IXYS All rights reserved
N-Channel Enhancement Mode
Symbol
V
V
V
V
I
I
I
E
E
dv/dt
P
T
T
T
T
M
Weight
Symbol
(T
V
V
I
I
R
D25
DM
AR
GSS
DSS
J
JM
stg
L
DGR
GS
GSM
AR
AS
D
GS(th)
DSS
DSS
DS(on)
d
J
= 25°C, unless otherwise specified)
Test Conditions
T
T
Continuous
Transient
T
T
T
T
T
I
T
T
1.6 mm (0.062 in.) from case for 10 s
Mounting torque
TO-247 AD
TO-268
Test Conditions
V
V
V
V
V
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
S
V
C
C
C
C
C
C
J
J
J
GS
GS
DS
DS
GS
GS
= 25°C to 150°C
= 25°C to 150°C; R
= 25°C
= 25°C, pulse width limited by T
= 25°C
= 25°C
= 25°C
≤ I
≤ 150°C, R
= 25°C
= 0 V, I
= V
= ±20 V
= V
= 0 V
= 10 V, I
DM
, di/dt ≤ 100 A/µs, V
GS
DSS
, I
D
D
DC
= 250 µA
D
= 250µA
, V
= 0.5 I
G
= 2 Ω
DS
= 0
D25
GS
= 1 MΩ
DD
T
T
≤ V
J
J
= 125°C
= 25°C
DSS
JM
,
IXTH 75N15
IXTT 75N15
150
Min. Typ.
2.0
Characteristic Values
-55 ... +150
-55 ... +150
Maximum Ratings
1.13/10 Nm/lb.in.
150
150
±20
±30
300
330
150
300
1.5
75
75
60
6
4
5
±100
250
Max.
4.0
25
23
V/ns
mΩ
mJ
µA
°C
°C
°C
°C
nA
µA
W
A
A
A
V
V
V
V
V
g
g
V
J
Features
Advantages
TO-247 AD (IXTH)
TO-268 (IXTT)
G = Gate
S = Source
R
V
I
International standard packages
Low R
Rugged polysilicon gate cell structure
Unclamped Inductive Switching (UIS)
rated
Low package inductance
- easy to drive and to protect
Easy to mount
Space savings
High power density
D25
DSS
DS(on)
DS (on)
G
HDMOS
= 150
=
=
D = Drain
TAB = Drain
S
TM
75
23 mΩ Ω Ω Ω Ω
DS98948C(05/04)
process
V
A
(TAB)
(TAB)
Related parts for IXTH75N15
IXTH75N15 Summary of contents
... GSS DSS DS DSS 0.5 I DS(on D25 Pulse test, t ≤ 300 µs, duty cycle d ≤ © 2004 IXYS All rights reserved IXTH 75N15 IXTT 75N15 Maximum Ratings 150 = 1 MΩ 150 GS ±20 ±30 75 300 1.5 ≤ DSS 330 -55 ... +150 150 -55 ... +150 300 1 ...
... F -di/dt = 100 A/µ 100V RM R Min Recommended Footprint IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by 4,835,592 one or moreof the following U.S. patents: 4,850,072 Characteristic Values (T = 25°C, unless otherwise specified) J Min. ...
... Value vs 10V GS 1 1.6 1.4 1 25º 0 100 120 140 160 180 200 I - Amperes D © 2004 IXYS All rights reserved 200 180 8V 7V 160 140 120 100 6V 5V 1.2 1.4 1.6 1.8 2 2.2 1.8 1.6 6V 1.4 1.2 5V 0.8 0.6 2.5 3 3.5 ...
... J 0 0.4 0.6 0 Volts S D Fig. 11. Capacitance 10000 f = 1MHz 1000 100 Volts D S IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by 4,835,592 one or moreof the following U.S. patents: 4,850,072 6 1.2 1.4 1 ...
... IXYS All rights reserved Fig . 13. M axim tan Puls e W idth - millis ec onds IXTH 75N15 IXTT 75N15 ...
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