IXTH75N15 IXYS, IXTH75N15 Datasheet - Page 2

• Manufacturer Part Number: IXTH75N15
• Description: MOSFET N-CH 150V 75A TO-247
• Manufacturer: IXYS

Specifications of IXTH75N15

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 23 mOhm @ 500mA, 10V
• Drain To Source Voltage (vdss): 150V
• Current - Continuous Drain (id) @ 25° C: 75A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 210nC @ 10V
• Input Capacitance (ciss) @ Vds: 5400pF @ 25V
• Power - Max: 330W
• Mounting Type: Through Hole
• Package / Case: TO-247
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.023 Ohms
• Drain-source Breakdown Voltage: 150 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 75 A
• Power Dissipation: 330 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Vdss, Max, (v): 150
• Id(cont), Tc=25°c, (a): 75
• Rds(on), Max, Tj=25°c, (?): -
• Ciss, Typ, (pf): -
• Qg, Typ, (nc): -
• Trr, Typ, (ns): -
• Pd, (w): -
• Rthjc, Max, (k/w): -
• Package Style: TO-247
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

IXYS reserves the right to change limits, test conditions, and dimensions.
Symbol
g
C
C
C
t
t
t
t
Q
Q
Q
R
R
Source-Drain Diode
Symbol
I
I
V
T
Q
Min Recommended Footprint
IXYS MOSFETs and IGBTs are covered by
one or moreof the following U.S. patents:
d(on)
d(off)
f
S
SM
r
fs
oss
thJC
thCK
SD
rr
iss
rss
g(on)
gs
gd
RM
Test Conditions
V
V
V
R
V
(TO-247)
Test Conditions
V
Repetitive
I
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
I
-di/dt = 100 A/µs
V
F
F
GS
GS
G
GS
GS
DS
R
= I
= 25A
= 100V
= 0 V
S
= 10 V; I
= 10 V, V
= 2 Ω (External)
= 10 V, V
, V
= 0 V, V
GS
= 0 V,
D
DS
DS
DS
= 0.5 I
4,835,592
4,850,072
= 25 V, f = 1 MHz
= 0.5 V
= 0.5 V
D25
, pulse test
DSS
DSS
4,881,106
4,931,844
, I
, I
(T
(T
D
D
= 0.5 I
= 0.5 I
J
J
= 25°C, unless otherwise specified)
= 25°C, unless otherwise specified)
5,034,796
5,017,508
D25
D25
5,049,961
5,063,307
min.
Min.
34
Characteristic Values
Characteristic Values
5400
1100
5,187,117
5,237,481
Typ.
0.21
150
typ.
420
210
2.0
45
24
33
70
17
45
90
0.35
max.
Max.
300
5,486,715
1.5
5,381,025
75
K/W
K/W
nC
nC
nC
µC
pF
pF
pF
ns
ns
ns
ns
ns
S
A
A
V
6,162,665
6,259,123 B1 6,404,065 B1
Terminals: 1 - Gate
TO-247 AD Outline
Terminals: 1 - Gate
TO-268 Outline
6,306,728 B1 6,534,343
Dim.
A
A
A
b
b
b
C
D
E
e
L
L1
∅P
Q
R
S
1
2
1
2
3 - Source
3 - Source
20.80
15.75
19.81
1.65
2.87
5.20
3.55
5.89
4.32
6.15 BSC
Min.
4.7
2.2
2.2
1.0
Millimeter
1
6,583,505
.4
2
IXTH 75N15
IXTT 75N15
3
21.46
16.26
20.32
Max.
2.54
2.13
3.12
5.72
4.50
3.65
6.40
5.49
5.3
2.6
1.4
2 - Drain
Tab - Drain
.8
2 - Drain
Tab - Drain
6,683,344
6,710,405B2
0.205 0.225
0.232 0.252
.185
.087
.059
.040
.065
.113
.016
.819
.610
.780
.140
.170
Min.
242 BSC
Inches
Max.
.209
.102
.098
.055
.084
.123
.031
.845
.640
.800
.177
.144
.216