STB24NM65N STMicroelectronics, STB24NM65N Datasheet - Page 9
![MOSFET N-CH 650V 19A D2PAK](/photos/1/39/13904/d2pak_sml.jpg)
STB24NM65N
Manufacturer Part Number
STB24NM65N
Description
MOSFET N-CH 650V 19A D2PAK
Manufacturer
STMicroelectronics
Series
MDmesh™r
Datasheet
1.STP24NM65N.pdf
(19 pages)
Specifications of STB24NM65N
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
190 mOhm @ 9.5A, 10V
Drain To Source Voltage (vdss)
650V
Current - Continuous Drain (id) @ 25° C
19A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
70nC @ 10V
Input Capacitance (ciss) @ Vds
2500pF @ 50V
Power - Max
160W
Mounting Type
Surface Mount
Package / Case
D²Pak, TO-263 (2 leads + tab)
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.16 Ohms
Forward Transconductance Gfs (max / Min)
14 S
Drain-source Breakdown Voltage
650 V
Gate-source Breakdown Voltage
+/- 25 V
Continuous Drain Current
19 A
Power Dissipation
160 W
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
497-7002-2
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
STB24NM65N-STI24NM65N-STF24NM65N-STP/W24NM65N
Figure 14. Normalized gate threshold voltage
Figure 16. Source-drain diode forward
vs temperature
characteristics
Figure 15. Normalized on resistance vs
Figure 17. Normalized B
temperature
Electrical characteristics
VDSS
vs temperature
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