STB24NM65N STMicroelectronics, STB24NM65N Datasheet - Page 14
![MOSFET N-CH 650V 19A D2PAK](/photos/1/39/13904/d2pak_sml.jpg)
STB24NM65N
Manufacturer Part Number
STB24NM65N
Description
MOSFET N-CH 650V 19A D2PAK
Manufacturer
STMicroelectronics
Series
MDmesh™r
Datasheet
1.STP24NM65N.pdf
(19 pages)
Specifications of STB24NM65N
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
190 mOhm @ 9.5A, 10V
Drain To Source Voltage (vdss)
650V
Current - Continuous Drain (id) @ 25° C
19A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
70nC @ 10V
Input Capacitance (ciss) @ Vds
2500pF @ 50V
Power - Max
160W
Mounting Type
Surface Mount
Package / Case
D²Pak, TO-263 (2 leads + tab)
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.16 Ohms
Forward Transconductance Gfs (max / Min)
14 S
Drain-source Breakdown Voltage
650 V
Gate-source Breakdown Voltage
+/- 25 V
Continuous Drain Current
19 A
Power Dissipation
160 W
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
497-7002-2
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Package mechanical data
14/19
Dim
A1
b1
e1
L1
L2
c2
A
D
E
b
e
L
c
4.40
2.40
0.61
1.14
0.49
1.23
8.95
2.40
4.95
3.50
1.27
Min
10
13
STB24NM65N-STI24NM65N-STF24NM65N-STP/W24NM65N
TO-262 mechanical data
mm
Typ
10.40
Max
4.60
2.72
0.88
1.70
0.70
1.32
9.35
2.70
5.15
3.93
1.40
14
0.173
0.094
0.024
0.044
0.019
0.048
0.352
0.094
0.194
0.393
0.511
0.137
0.050
Min
inch
Typ
0.181
0.107
0.034
0.066
0.027
0.052
0.368
0.106
0.202
0.410
0.551
0.154
0.055
Max