STW40NF20 STMicroelectronics, STW40NF20 Datasheet - Page 5

• Manufacturer Part Number: STW40NF20
• Description: MOSFET N-CH 200V 40A TO-247
• Manufacturer: STMicroelectronics
• Series: STripFET™r

Specifications of STW40NF20

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 45 mOhm @ 20A, 10V
• Drain To Source Voltage (vdss): 200V
• Current - Continuous Drain (id) @ 25° C: 40A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 75nC @ 10V
• Input Capacitance (ciss) @ Vds: 2500pF @ 25V
• Power - Max: 160W
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.045 Ohms
• Forward Transconductance Gfs (max / Min): 30 S
• Drain-source Breakdown Voltage: 200 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 25 A to 40 A
• Power Dissipation: 160 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-5807-5

STB40NF20 - STF40NF20 - STP40NF20 - STW40NF20
Table 6.
1. Pulse width limited by safe operating area.
2. Pulsed: Pulse duration = 300 µs, duty cycle 1.5%
Symbol
I
V
SDM
I
I
SD
RRM
RRM
I
Q
Q
SD
t
t
rr
rr
rr
rr
(2)
(1)
Source-drain current
Source-drain current
(pulsed)
Forward on voltage
Reverse recovery time
Reverse recovery charge
Reverse recovery current
Reverse recovery time
Reverse recovery charge
Reverse recovery current
Source drain diode
Parameter
I
I
di/dt = 100A/µs,
V
(see
I
di/dt = 100A/µs,
V
(see
SD
SD
SD
DD
DD
= 20A, V
= 20A,
= 20A,
= 25V
= 25V, T
Figure
Figure
Test conditions
19)
19)
GS
j
= 150°C
= 0
Min.
Electrical characteristics
1440
Typ.
11.9
192
922
242
9.6
Max.
160
1.5
40
Unit
nC
nC
ns
ns
A
A
V
A
A
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