STW40NF20 STMicroelectronics, STW40NF20 Datasheet - Page 4

• Manufacturer Part Number: STW40NF20
• Description: MOSFET N-CH 200V 40A TO-247
• Manufacturer: STMicroelectronics
• Series: STripFET™r

Specifications of STW40NF20

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 45 mOhm @ 20A, 10V
• Drain To Source Voltage (vdss): 200V
• Current - Continuous Drain (id) @ 25° C: 40A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 75nC @ 10V
• Input Capacitance (ciss) @ Vds: 2500pF @ 25V
• Power - Max: 160W
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.045 Ohms
• Forward Transconductance Gfs (max / Min): 30 S
• Drain-source Breakdown Voltage: 200 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 25 A to 40 A
• Power Dissipation: 160 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-5807-5

Electrical characteristics
2
4/17
Electrical characteristics
(T
Table 4.
Table 5.
1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5%.
V
Symbol
Symbol
CASE
R
V
(BR)DSS
g
t
t
I
C
I
C
GS(th)
DS(on)
C
Q
d(on)
d(off)
Q
DSS
GSS
fs
Q
oss
t
t
iss
rss
gs
gd
r
f
(1)
g
=25°C unless otherwise specified)
Forward
transconductance
Input capacitance
Output capacitance
Reverse transfer
capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Total gate charge
Gate-source charge
Gate-drain charge
Drain-source
breakdown voltage
Zero gate voltage
drain current (V
Gate-body leakage
current (V
Gate threshold voltage
Static drain-source on
resistance
On/off states
Dynamic
Parameter
Parameter
DS
= 0)
GS
= 0)
STB40NF20 - STF40NF20 - STP40NF20 - STW40NF20
I
V
V
V
V
V
V
V
V
V
R
(see
V
V
(see
D
DS
DS
GS
DS
GS
GS
GS
DS
DS
DD
DD
G
= 1mA, V
= 4.7Ω V
= max ratings
= max ratings@125°C
= ± 20V
= V
= 10V, I
= 15V, I
= 25V, f = 1MHz,
= 0
= 100V, I
= 160V, I
= 10V
Figure
Figure
Test conditions
Test conditions
GS
, I
GS
D
17)
18)
D
GS
D
D
D
= 20A
= 20A
= 250µA
=0
= 20A
= 10V
= 40A,
Min.
Min.
200
2
0.038 0.045
2500
Typ.
13.2
35.5
Typ.
510
30
78
20
44
74
22
75
3
Max.
Max.
±100
10
1
4
Unit
Unit
µA
µA
nA
nC
nC
nC
pF
pF
pF
ns
ns
ns
ns
V
V
Ω
S