IRF3805S-7PPBF International Rectifier, IRF3805S-7PPBF Datasheet - Page 7

• Manufacturer Part Number: IRF3805S-7PPBF
• Description: MOSFET N-CH 55V 160A D2PAK-7
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF3805S-7PPBF

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 2.6 mOhm @ 140A, 10V
• Drain To Source Voltage (vdss): 55V
• Current - Continuous Drain (id) @ 25° C: 160A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 200nC @ 10V
• Input Capacitance (ciss) @ Vds: 7820pF @ 25V
• Power - Max: 300W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (6 leads + tab)
• Transistor Polarity: N Channel
• Continuous Drain Current Id: 240A
• Drain Source Voltage Vds: 55V
• On Resistance Rds(on): 2.6mohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 4V
• Rohs Compliant: Yes
• Drain-source Breakdown Voltage: 55 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 240 A
• Power Dissipation: 300 W
• Mounting Style: SMD/SMT
• Gate Charge Qg: 130 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

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1000
100
10
500
400
300
200
100
1.0E-06
1
0
Fig 16. Maximum Avalanche Energy
25
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming
Tstart = 150°C.
Starting T J , Junction Temperature (°C)
50
Duty Cycle = Single Pulse
vs. Temperature
TOP
BOTTOM 1% Duty Cycle
I D = 140A
75
1.0E-05
100
Fig 15. Typical Avalanche Current vs.Pulsewidth
Single Pulse
0.01
125
j = 25°C and
0.05
0.10
150
1.0E-04
175
tav (sec)
Notes on Repetitive Avalanche Curves , Figures 15, 16:
(For further info, see AN-1005 at www.irf.com)
1. Avalanche failures assumption:
2. Safe operation in Avalanche is allowed as long asT
3. Equation below based on circuit and waveforms shown in
4. P
5. BV = Rated breakdown voltage (1.3 factor accounts for
6. I
7. T
Purely a thermal phenomenon and failure occurs at a
not exceeded.
Figures 12a, 12b.
T
t
D = Duty cycle in avalanche = t
Z
temperature far in excess of T
every part type.
avalanche pulse.
voltage increase during avalanche).
av
av =
thJC
D (ave)
jmax
= Allowable avalanche current.
=
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming
Tstart =25°C (Single Pulse)
Average time in avalanche.
(D, t
Allowable rise in junction temperature, not to exceed
(assumed as 25°C in Figure 15, 16).
= Average power dissipation per single
1.0E-03
av
P
) = Transient thermal resistance, see figure 11)
D (ave)
= 1/2 ( 1.3·BV·I
I
E
av
AS (AR)
= 2DT/ [1.3·BV·Z
= P
D (ave)
1.0E-02
jmax
av
Tj = 150°C and
av
. This is validated for
·f
) = DT/ Z
·t
th
av
]
thJC
jmax
1.0E-01
7
is