IRF3805S-7PPBF International Rectifier, IRF3805S-7PPBF Datasheet - Page 5
![MOSFET N-CH 55V 160A D2PAK-7](/photos/5/50/55043/21-d2pak-7_sml.jpg)
IRF3805S-7PPBF
Manufacturer Part Number
IRF3805S-7PPBF
Description
MOSFET N-CH 55V 160A D2PAK-7
Manufacturer
International Rectifier
Series
HEXFET®r
Datasheet
1.IRF3805S-7PPBF.pdf
(11 pages)
Specifications of IRF3805S-7PPBF
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
2.6 mOhm @ 140A, 10V
Drain To Source Voltage (vdss)
55V
Current - Continuous Drain (id) @ 25° C
160A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
200nC @ 10V
Input Capacitance (ciss) @ Vds
7820pF @ 25V
Power - Max
300W
Mounting Type
Surface Mount
Package / Case
D²Pak, TO-263 (6 leads + tab)
Transistor Polarity
N Channel
Continuous Drain Current Id
240A
Drain Source Voltage Vds
55V
On Resistance Rds(on)
2.6mohm
Rds(on) Test Voltage Vgs
10V
Threshold Voltage Vgs Typ
4V
Rohs Compliant
Yes
Drain-source Breakdown Voltage
55 V
Gate-source Breakdown Voltage
20 V
Continuous Drain Current
240 A
Power Dissipation
300 W
Mounting Style
SMD/SMT
Gate Charge Qg
130 nC
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
www.irf.com
250
200
150
100
0.001
50
0.01
0
0.1
1
Fig 9. Maximum Drain Current vs.
1E-005
25
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
D = 0.50
50
0.02
0.01
0.20
0.05
0.10
Case Temperature
T C , Case Temperature (°C)
75
SINGLE PULSE
( THERMAL RESPONSE )
0.0001
100
Limited By Package
125
150
t 1 , Rectangular Pulse Duration (sec)
0.001
175
J
J
1
Ci= i Ri
1
Ci
2.5
2.0
1.5
1.0
0.5
i Ri
Fig 10. Normalized On-Resistance
R
-60 -40 -20 0 20 40 60 80 100120140160180
1
R
1
0.01
I D = 140A
V GS = 10V
2
R
2
2
R
2
T J , Junction Temperature (°C)
vs. Temperature
R
3
3
R
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
3
3
C
Ri (°C/W)
0.0794
0.1474
0.2737
0.1
0.000192
0.000628
0.014012
i (sec)
5
1