IRF3805S-7PPBF International Rectifier, IRF3805S-7PPBF Datasheet - Page 5

• Manufacturer Part Number: IRF3805S-7PPBF
• Description: MOSFET N-CH 55V 160A D2PAK-7
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF3805S-7PPBF

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 2.6 mOhm @ 140A, 10V
• Drain To Source Voltage (vdss): 55V
• Current - Continuous Drain (id) @ 25° C: 160A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 200nC @ 10V
• Input Capacitance (ciss) @ Vds: 7820pF @ 25V
• Power - Max: 300W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (6 leads + tab)
• Transistor Polarity: N Channel
• Continuous Drain Current Id: 240A
• Drain Source Voltage Vds: 55V
• On Resistance Rds(on): 2.6mohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 4V
• Rohs Compliant: Yes
• Drain-source Breakdown Voltage: 55 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 240 A
• Power Dissipation: 300 W
• Mounting Style: SMD/SMT
• Gate Charge Qg: 130 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

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250
200
150
100
0.001
50
0.01
0
0.1
1
Fig 9. Maximum Drain Current vs.
1E-005
25
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
D = 0.50
50
0.02
0.01
0.20
0.05
0.10
Case Temperature
T C , Case Temperature (°C)
75
SINGLE PULSE
( THERMAL RESPONSE )
0.0001
100
Limited By Package
125
150
t 1 , Rectangular Pulse Duration (sec)
0.001
175
J
J
1
Ci= i Ri
1
Ci
2.5
2.0
1.5
1.0
0.5
i Ri
Fig 10. Normalized On-Resistance
R
-60 -40 -20 0 20 40 60 80 100120140160180
1
R
1
0.01
I D = 140A
V GS = 10V
2
R
2
2
R
2
T J , Junction Temperature (°C)
vs. Temperature
R
3
3
R
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
3
3
C
Ri (°C/W)
0.0794
0.1474
0.2737
0.1
0.000192
0.000628
0.014012
i (sec)
5
1