IRF3805S-7PPBF International Rectifier, IRF3805S-7PPBF Datasheet - Page 4
![MOSFET N-CH 55V 160A D2PAK-7](/photos/5/50/55043/21-d2pak-7_sml.jpg)
IRF3805S-7PPBF
Manufacturer Part Number
IRF3805S-7PPBF
Description
MOSFET N-CH 55V 160A D2PAK-7
Manufacturer
International Rectifier
Series
HEXFET®r
Datasheet
1.IRF3805S-7PPBF.pdf
(11 pages)
Specifications of IRF3805S-7PPBF
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
2.6 mOhm @ 140A, 10V
Drain To Source Voltage (vdss)
55V
Current - Continuous Drain (id) @ 25° C
160A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
200nC @ 10V
Input Capacitance (ciss) @ Vds
7820pF @ 25V
Power - Max
300W
Mounting Type
Surface Mount
Package / Case
D²Pak, TO-263 (6 leads + tab)
Transistor Polarity
N Channel
Continuous Drain Current Id
240A
Drain Source Voltage Vds
55V
On Resistance Rds(on)
2.6mohm
Rds(on) Test Voltage Vgs
10V
Threshold Voltage Vgs Typ
4V
Rohs Compliant
Yes
Drain-source Breakdown Voltage
55 V
Gate-source Breakdown Voltage
20 V
Continuous Drain Current
240 A
Power Dissipation
300 W
Mounting Style
SMD/SMT
Gate Charge Qg
130 nC
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
100000
10000
10000
4
1000
1000
100
100
0.1
10
1
Fig 5. Typical Capacitance vs.
Fig 7. Typical Source-Drain Diode
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8
1
Drain-to-Source Voltage
V DS , Drain-to-Source Voltage (V)
V SD , Source-to-Drain Voltage (V)
V GS = 0V,
C iss = C gs + C gd , C ds SHORTED
C rss = C gd
C oss = C ds + C gd
T J = 175°C
Forward Voltage
C iss
C rss
C oss
f = 1 MHZ
10
T J = 25°C
V GS = 0V
100
10000
1000
12.0
10.0
100
8.0
6.0
4.0
2.0
0.0
0.1
10
Fig 8. Maximum Safe Operating Area
1
0
1
Fig 6. Typical Gate Charge vs.
Tc = 25°C
Tj = 175°C
Single Pulse
I D = 140A
Gate-to-Source Voltage
V DS , Drain-to-Source Voltage (V)
Q G Total Gate Charge (nC)
OPERATION IN THIS AREA
LIMITED BY R DS (on)
50
V DS = 64V
V DS = 40V
DC
10
1msec
10msec
100µsec
www.irf.com
100
150
100